SiA910EDJ Vishay Siliconix Dual N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a V (V) R () Q (Typ.) Thermally Enhanced PowerPAK I (A) DS DS(on) g D SC-70 Package 0.028 at V = 4.5 V 4.5 GS - Small Footprint Area 12 0.033 at V = 2.5 V 6.2 nC 4.5 - Low On-Resistance GS Typical ESD Protection: 2400 V 0.042 at Vgs = 1.8 V 4.5 100 % R Tested g PowerPAK SC-70-6 Dual Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 1 APPLICATIONS S 1 2 Load Switch for Portable Applications G 1 3 High Frequency DC/DC Converter D1 D 2 DC/DC Converter D 1 D 2 6 D D 1 2 G 2 5 2.05 mm 2.05 mm S 2 4 G G 1 2 Ordering Information: SiA910EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code C F X Part code X X X S S Lot Traceability 1 N-Channel MOSFET N-Channel MOSFET 2 and Date code ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 12 DS V Gate-Source Voltage V 8 GS a T = 25 C C 4.5 a T = 70 C C 4.5 Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 4.5 A a, b, c T = 70 C A A 4.5 I Pulsed Drain Current 20 DM a T = 25 C C 4.5 Continuous Source-Drain Diode Current I S b, c T = 25 C 1.6 A T = 25 C 7.8 C T = 70 C 5 C P Maximum Power Dissipation W D b, c T = 25 C A 1.9 b, c T = 70 C 1.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 52 65 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 12.5 16 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 C/W. Document Number: 65535 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S13-0460-Rev. B, 04-Mar-13 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA910EDJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 8 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.4 1 V GS(th) DS GS D V = 0 V, V = 8 V 5 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 0.5 DS GS A V = 12 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current DSS V = 12 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 10 A On-State Drain Current D(on) DS GS V 4.5 V, I = 5.2 A 0.023 0.028 GS D a R V 2.5 V, I = 4.8 A 0.027 0.033 Drain-Source On-State Resistance DS(on) GS D V 1.8 V, I = 2.5 A 0.035 0.042 GS D a g V = 10 V, I = 5.2 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 455 iss C V = 6 V, V = 0 V, f = 1 MHz Output Capacitance 190 pF oss DS GS C Reverse Transfer Capacitance 150 rss V = 6 V, V = 8 V, I = 6.8 A 10.5 16 DS GS D Q Total Gate Charge g 6.2 9.5 nC Q Gate-Source Charge V = 6 V, V = 4.5 V, I = 6.8 A 0.8 gs DS GS D Q Gate-Drain Charge 1.6 gd R Gate Resistance f = 1 MHz 0.8 4 8 g t Turn-On Delay Time 10 15 d(on) Rise Time t 12 20 r V = 6 V, R = 1.1 DD L t Turn-Off Delay Time 25 40 d(off) I 5.4 A, V = 4.5 V, R = 1 D GEN g Fall Time t 12 20 f ns t Turn-On Delay Time 510 d(on) Rise Time t 10 15 r V = 6 V, R = 1.1 DD L t Turn-Off Delay Time 20 30 d(off) I 5.4 A, V = 10 V, R = 1 D GEN g t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 4.5 S C A I Pulse Diode Forward Current 20 SM V I = 5.4 A, V 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 25 50 ns rr Q Body Diode Reverse Recovery Charge 10 20 nC rr I = 5.4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 13 a ns t Reverse Recovery Rise Time 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 65535 2 S13-0460-Rev. B, 04-Mar-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000