New Product Si7772DP Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition a 0.013 at V = 10 V GS 35.6 SkyFET Monolithic TrenchFET Gen III 30 8.3 nC 0.0165 at V = 4.5 V 31.6 Power MOSFET and Schottky Diode GS 100 % R Tested g 100 % UIS Tested PowerPAK SO-8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S 6.15 mm 5.15 mm 1 Notebook System Power S D 2 - Low Side S 3 G 4 D 8 D 7 D Schottky Diode 6 D G 5 N-Channel MOSFET Bottom View Ordering Information: Si7772DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V V Gate-Source Voltage 20 GS a T = 25 C 35.6 C T = 70 C 28.5 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 12.9 A b, c T = 70 C 10.3 A A I Pulsed Drain Current 50 DM T = 25 C 27 C I Continuous Source-Drain Diode Current S b, c T = 25 C 3.5 A I Single Pulse Avalanche Current 15 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 11.25 AS T = 25 C 29.8 C T = 70 C 19 C Maximum Power Dissipation P W D b, c T = 25 C 3.9 A b, c T = 70 C A 2.5 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 27 32 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 3.5 4.2 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 70 C/W. Document Number: 65169 www.vishay.com S09-1822-Rev. A, 14-Sep-09 1New Product Si7772DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 DS GS D V V V = V , I = 250 A Gate-Source Threshold Voltage 1.2 2.5 GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 0.028 0.2 DS GS Zero Gate Voltage Drain Current I mA DSS V = 30 V, V = 0 V, T = 100 C 220 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0105 0.013 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.013 0.0165 GS D a g V = 15 V, I = 15 A 37 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1084 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 200 pF oss DS GS C Reverse Transfer Capacitance 77 rss V = 15 V, V = 10 V, I = 10 A 18.5 28 DS GS D Total Gate Charge Q g 8.3 12.5 nC Q Gate-Source Charge V = 15 V, V = 4.5 V, I = 10 A 2.8 gs DS GS D Q Gate-Drain Charge 2 gd R Gate Resistance f = 1 MHz 0.3 1.3 2.6 g t Turn-On Delay Time 16 30 d(on) t Rise Time V = 15 V, R = 1.5 18 35 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 15 30 d(off) t Fall Time 10 20 f ns t Turn-On Delay Time 816 d(on) Rise Time t 11 22 V = 15 V, R = 1.5 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 17 34 d(off) Fall Time t 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 27 S C A a I 50 Pulse Diode Forward Current SM Body Diode Voltage V I = 1 A 0.48 0.65 V SD S t Body Diode Reverse Recovery Time 17 34 ns rr Body Diode Reverse Recovery Charge Q 714 nC rr I = 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 10 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65169 2 S09-1822-Rev. A, 14-Sep-09