Si7810DN Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFET 0.062 at V = 10 V 5.4 GS New Low Thermal Resistance RoHS 100 COMPLIANT 0.084 at V = 6 V PowerPAK 1212-8 Package with Low 4.6 GS 1.07 mm Profile PWM Optimized APPLICATIONS Primary Side Switch In-Rush Current Limiter PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 D S 2 S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7810DN-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7810DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 5.4 3.4 A A a I Continuous Drain Current (T = 150 C) D J T = 70 C 4.3 2.8 A I 20 Pulsed Drain Current DM a I 3.2 1.3 A S Continuous Source Current (Diode Conduction) Single Avalanche Current I 19 AS L = 0.1 mH Single Avalanche Energy (Duty Cycle 1 %) E 18 mJ AS T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.0 0.8 A Operating Junction and Storage Temperature Range T , T 55 to 150 J stg C b,c 260 Soldering Recommendations THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 26 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W Maximum Junction-to-Case (Drain) Steady State R 1.9 2.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7810DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 24.5V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 100 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 5.4 A 0.052 0.062 GS D a R Drain-Source On-State Resistance DS(on) V = 6 V, I = 4.6 A 0.070 0.084 GS D a g V = 15 V, I = 5.4 A 12 S Forward Transconductance fs DS D a V I = 3.2 A, V = 0 V 0.78 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 13.5 17 g Q V = 50 V, V = 10 V, I = 5.4 A Gate-Source Charge 3 nC gs DS GS D Gate-Drain Charge Q 4.6 gd t Turn-On Delay Time 10 15 d(on) Rise Time t 15 25 V = 50 V, R = 50 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off DelayTime D GEN G 20 30 ns d(off) Fall Time t 15 25 f t I = 3.2 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 45 90 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS T = 25 C, unless otherwise noted A 20 20 6 V V = 10 thru 7 V GS 16 16 12 12 8 8 T = 125 C C 5 V 4 4 25 C - 55 C 4 V 0 0 0 1234 5 012 34 567 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 70689 2 S-81544-Rev. C, 07-Jul-08 I - Drain Current (A) D I - Drain Current (A) D