X-On Electronics has gained recognition as a prominent supplier of SI7842DP-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7842DP-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7842DP-T1-E3 Vishay

SI7842DP-T1-E3 electronic component of Vishay

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Part No.	SI7842DP-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 30V 10A 3.5W Low profile, high efficiency surface mount IGBT with NPT technology to provide high power density.
Datasheet:	SI7842DP-T1-E3 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 0.8269 ea
Line Total: USD 2480.7

Availability - 0

MOQ: 3000 Multiples: 1
Pack Size: 1

SI7842DP-T1-E3 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 15 Nov to Thu. 21 Nov MOQ : 3000 Multiples : 1	3000 : USD 0.8269

We are delighted to provide the SI7842DP-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7842DP-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

SI7842DP-T1-E3 is a dual N-channel MOSFET manufactured by Vishay. It is designed for use as a high-side switch and is rated to support up to 40V drain-source voltage and 30V gate-source voltage. The SI7842DP-T1-E3 has a maximum drain current of 40A, a fast switching speed of 21ns, an 18A RDS(on)-max and an integrated diode for reverse conduction of switch current. It is available in a TO-220F-3L package and is RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 6.3 A 6.3 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 22 mOhms 22 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 20 V 20 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 1.4 W 1.4 W
Mounting Style smd/smt smd/smt
Package / Case SO - 8 SO - 8
Packaging Reel Reel
Channel Mode enhancement enhancement
Tradename little foot plus little foot plus
Configuration dual with schottky diode dual with schottky diode
Brand Vishay / Siliconix Vishay / Siliconix
Forward Transconductance - Min 22 s 22 s
Fall Time 10 ns 10 ns
Rise Time 10 ns 10 ns
Factory Pack Quantity : 3000 3000
Typical Turn-Off Delay Time 21 ns 21 ns