New Product Si7790DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0045 at V = 10 V 50 GS 100 % R and UIS Tested COMPLIANT g 40 29 nC 0.006 at V = 4.5 V 50 GS APPLICATIONS PowerPAK SO-8 DC/DC Converter D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D 8 G D 7 D 6 D 5 S Bottom View Ordering Information: Si7790DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 25 GS a, e T = 25 C C 50 e T = 70 C 50 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 25.3 b, c T = 70 C A 20.1 A Pulsed Drain Current I 70 DM a, e T = 25 C C 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.7 Single Pulse Avalanche Current I 40 AS L = 0.1 mH Avalanche Energy E mJ 80 AS T = 25 C 69 C T = 70 C 44.4 C Maximum Power Dissipation P W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C f, g 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.2 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 65 C/W. e. Package limited. f. See Solder Profile (New Product Si7790DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V Drain-Source Breakdown Voltage V = 0 V, I = 250 A 40 V DS GS D V Temperature Coefficient V /T 43 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.0 GS(th) GS(th) J V Gate-Source Threshold Voltage V = V , I = 250 A 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0036 0.0045 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0048 0.006 GS D a g V = 15 V, I = 15 A 65 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4200 iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz 475 pF oss DS GS C Reverse Transfer Capacitance 225 rss V = 20 V, V = 10 V, I = 10 A 62 95 DS GS D Total Gate Charge Q g 29 44 nC Q Gate-Source Charge V = 20 V, V = 4.5 V, I = 10 A 12 gs DS GS D Gate-Drain Charge Q 9 gd R Gate Resistance f = 1 MHz 0.2 1.0 2.0 g Turn-On Delay Time t 42 70 d(on) t Rise Time V = 20 V, R = 2 34 60 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 45 75 d(off) t Fall Time 28 45 f ns t Turn-On Delay Time 14 25 d(on) t Rise Time V = 20 V, R = 2 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 35 60 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 70 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 31 50 ns rr Q Body Diode Reverse Recovery Charge 31 50 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 18 a ns t Reverse Recovery Rise Time 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68664 2 S-81217-Rev. A, 02-Jun-08