X-On Electronics has gained recognition as a prominent supplier of SI7790DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7790DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7790DP-T1-GE3 Vishay

SI7790DP-T1-GE3 electronic component of Vishay
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Part No.SI7790DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 40V 50A 69W 4.5mohm @ 10V
Datasheet: SI7790DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 3000
Multiples : 1
3000 : USD 1.8009
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Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.2378
10 : USD 1.9373
25 : USD 1.8485
100 : USD 1.7596
250 : USD 1.7217
500 : USD 1.6837
N/A

Obsolete
0
MOQ : 3000
Multiples : 1
3000 : USD 1.872
6000 : USD 1.6458
12000 : USD 1.4664
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 1.4445
N/A

Obsolete
0
MOQ : 3000
Multiples : 3000
3000 : USD 0.8908
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 6.4466
10 : USD 2.2907
100 : USD 2.0027
500 : USD 1.8849
1000 : USD 1.6886
3000 : USD 1.6886
6000 : USD 1.6754
9000 : USD 1.61
24000 : USD 1.5577
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI7790DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7790DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si7790DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0045 at V = 10 V 50 GS 100 % R and UIS Tested COMPLIANT g 40 29 nC 0.006 at V = 4.5 V 50 GS APPLICATIONS PowerPAK SO-8 DC/DC Converter D S 6.15 mm 5.15 mm 1 S 2 S 3 G 4 D 8 G D 7 D 6 D 5 S Bottom View Ordering Information: Si7790DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 40 DS V Gate-Source Voltage V 25 GS a, e T = 25 C C 50 e T = 70 C 50 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 25.3 b, c T = 70 C A 20.1 A Pulsed Drain Current I 70 DM a, e T = 25 C C 50 I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.7 Single Pulse Avalanche Current I 40 AS L = 0.1 mH Avalanche Energy E mJ 80 AS T = 25 C 69 C T = 70 C 44.4 C Maximum Power Dissipation P W D b, c T = 25 C A 5.2 b, c T = 70 C A 3.3 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C f, g 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 19 24 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.2 1.8 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 65 C/W. e. Package limited. f. See Solder Profile (New Product Si7790DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V Drain-Source Breakdown Voltage V = 0 V, I = 250 A 40 V DS GS D V Temperature Coefficient V /T 43 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 6.0 GS(th) GS(th) J V Gate-Source Threshold Voltage V = V , I = 250 A 1.2 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 40 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 40 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 15 A 0.0036 0.0045 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 10 A 0.0048 0.006 GS D a g V = 15 V, I = 15 A 65 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 4200 iss Output Capacitance C V = 20 V, V = 0 V, f = 1 MHz 475 pF oss DS GS C Reverse Transfer Capacitance 225 rss V = 20 V, V = 10 V, I = 10 A 62 95 DS GS D Total Gate Charge Q g 29 44 nC Q Gate-Source Charge V = 20 V, V = 4.5 V, I = 10 A 12 gs DS GS D Gate-Drain Charge Q 9 gd R Gate Resistance f = 1 MHz 0.2 1.0 2.0 g Turn-On Delay Time t 42 70 d(on) t Rise Time V = 20 V, R = 2 34 60 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 45 75 d(off) t Fall Time 28 45 f ns t Turn-On Delay Time 14 25 d(on) t Rise Time V = 20 V, R = 2 10 20 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 35 60 d(off) t Fall Time 918 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 50 S C A a I 70 Pulse Diode Forward Current SM V I = 3 A Body Diode Voltage 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 31 50 ns rr Q Body Diode Reverse Recovery Charge 31 50 nC rr I = 5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 18 a ns t Reverse Recovery Rise Time 13 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68664 2 S-81217-Rev. A, 02-Jun-08

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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