Si7820DN Vishay Siliconix N-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.240 at V = 10 V 2.6 GS PWM-Optimized TrenchFET Power MOSFET 200 12.1 0.250 at V = 6 V 2.5 GS 100 % R Tested g Avalanche Tested Compliant to RoHS Directive 2002/95/EC PowerPAK 1212-8 APPLICATIONS Primary Side Switch - Telecom Power Supplies S 3.30 mm 3.30 mm 1 - Distributed Power Architectures D S 2 - Miniature Power Modules S 3 G 4 D 8 D 7 G D 6 D 5 Bottom View S Ordering Information: Si7820DN-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7820DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 200 DS V V Gate-Source Voltage 20 GS T = 25 C 2.6 1.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 2.1 1.3 A I Pulsed Drain Current 10 A DM a I 3.2 1.3 Continuous Source Current (Diode Conduction) S I Single Avalanche Current 3.5 AS L = 0 1 mH E Single Avalanche Energy 0.6 mJ AS T = 25 C 3.8 1.5 A a P W Maximum Power Dissipation D T = 70 C 2.0 0.8 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 26 33 a R Maximum Junction-to-Ambient thJA Steady State 65 81 C/W R Maximum Junction-to-Case (Drain) Steady State 1.9 2.4 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop- per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72581 www.vishay.com S10-2136-Rev. E, 20-Sep-10 1Si7820DN Vishay Siliconix MOSFET SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = 250 A 24V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 200 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 200 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 2.6 A 0.200 0.240 GS D a R Drain-Source On-State Resistance DS(on) V = 6 V, I = 2.5 A 0.210 0.250 GS D a g V = 15 V, I = 2.6 A 8S Forward Transconductance fs DS D a V I = 3.2 A, V = 0 V 0.78 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 12.1 18 g Q V = 100 V, V = 10 V, I = 2.6 A Gate-Source Charge 2.5 nC gs DS GS D Q Gate-Drain Charge 4.1 gd R Gate Resistance f = 1 MHz 0.5 2.3 3.9 g t Turn-On Delay Time 11 20 d(on) Rise Time t 12 20 V = 100 V, R = 100 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 30 45 ns d(off) t Fall Time 17 30 f t I = 3.2 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 65 100 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 10 V = 10 V thru 6 V GS 5 V 8 8 6 6 4 4 T = 125 C C 2 2 25 C 4 V - 55 C 0 0 0 123 456 0 1234 5 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72581 2 S10-2136-Rev. E, 20-Sep-10 I - Drain Current (A) D I - Drain Current (A) D