X-On Electronics has gained recognition as a prominent supplier of SIA533EDJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA533EDJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA533EDJ-T1-GE3 Vishay

SIA533EDJ-T1-GE3 electronic component of Vishay
SIA533EDJ-T1-GE3 Vishay
SIA533EDJ-T1-GE3 MOSFETs
SIA533EDJ-T1-GE3  Semiconductors

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See Product Specifications
Part No. SIA533EDJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 12V 4.5A4.5A N&P-CH MOSFET
Datasheet: SIA533EDJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6354 ea
Line Total: USD 0.64 
Availability - 507
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
507
Ship by Fri. 14 Mar to Wed. 19 Mar
MOQ : 1
Multiples : 1
1 : USD 0.6354
10 : USD 0.6209
30 : USD 0.5238
100 : USD 0.464

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Qg - Gate Charge
Tradename
Configuration
Brand
Forward Transconductance - Min
Factory Pack Quantity :
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Length
Series
Width
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SIA533EDJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA533EDJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Semiconductors is an integrated semiconductor device designed to switch voltage levels from low to high for a variety of applications. It is a surface mount device (SMD) and has a total gate charge of 21 nC. It is a N-channel enhancement mode MOSFET with a rated drain current of 4.5A and a maximum drain-source voltage of 12V. The maximum current gain between the source and drain is 500, making this component suitable for high-speed switching applications. The SIA533EDJ-T1-GE3 has a low threshold voltage of 1.2V and a low Rdson of 0.02 Ohm. The temperature range of operation is -55°C to 150°C, making it suitable for a wide range of applications requiring high-efficiency power solutions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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