X-On Electronics has gained recognition as a prominent supplier of SIA814DJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIA814DJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIA814DJ-T1-GE3 Vishay

SIA814DJ-T1-GE3 electronic component of Vishay
SIA814DJ-T1-GE3 Vishay
SIA814DJ-T1-GE3 MOSFETs
SIA814DJ-T1-GE3  Semiconductors

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Part No. SIA814DJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 4.5A 6.5W 61mohm 10V
Datasheet: SIA814DJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6854 ea
Line Total: USD 0.69 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 0.6854

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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We are delighted to provide the SIA814DJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIA814DJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product SiA814DJ Vishay Siliconix N-Channel 30-V (D-S) MOSFET with Trench Schottky Diode FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D LITTLE FOOT Plus Schottky Power MOSFET 0.061 at V = 10 V 4.5 GS New Thermally Enhanced PowerPAK RoHS 30 0.072 at V = 4.5 V 4.5 3.2 nC GS SC-70 Package COMPLIANT 0.110 at V = 2.5 V 4.5 GS - Small Footprint Area - Low On-Resistance SCHOTTKY PRODUCT SUMMARY - Thin 0.75 mm profile V (V) f a V (V) I (A) KA Diode Forward Voltage F APPLICATIONS 30 0.56 at 1 A 2 DC/DC Converter for Portable Devices Load Switch for Portable Devices PowerPAK SC-70-6 Dual D K 1 A Marking Code 2 NC 3 G B X K D Part code G 0.75 mm X X X K D Lot Traceability 6 and Date code G 5 2.05 mm 2.05 mm S 4 S A N-Channel MOSFET Ordering Information: SiA814DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage (MOSFET) 30 DS V Reverse Voltage (Schottky) 30 V KA V Gate-Source Voltage (MOSFET) 12 GS a T = 25 C 4.5 C a T = 70 C 4.5 C Continuous Drain Current (T = 150 C) (MOSFET) I J D b, c T = 25 C 4.3 A b, c T = 70 C 3.4 A I Pulsed Drain Current (MOSFET) 15 A DM a T = 25 C 4.5 Continuous Source-Drain Diode Current C I S b, c (MOSFET Diode Conduction) T = 25 C 1.6 A b I Average Forward Current (Schottky) F 2 I Pulsed Forward Current (Schottky) 3 FM T = 25 C 6.5 C T = 70 C 5 C Maximum Power Dissipation (MOSFET) b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A P W D T = 25 C 6.8 C T = 70 C 4.3 C Maximum Power Dissipation (Schottky) b, c T = 25 C 1.6 A b, c T = 70 C 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) Document Number: 68672 www.vishay.com S-81176-Rev. A, 26-May-08 1New Product SiA814DJ Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit b, f R t 5 s 52 65 Maximum Junction-to-Ambient (MOSFET) thJA R Steady State 12.5 16 Maximum Junction-to-Case (Drain) (MOSFET) thJC C/W b, g R t 5 s thJA 62 76 Maximum Junction-to-Ambient (Schottky) R Maximum Junction-to-Case (Drain) (Schottky) Steady State 15 18.5 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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