X-On Electronics has gained recognition as a prominent supplier of SiA817EDJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SiA817EDJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SiA817EDJ-T1-GE3 Vishay

SiA817EDJ-T1-GE3 electronic component of Vishay
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Part No.SiA817EDJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -30V .065Ohm10V 4.5A P-Ch G-III
Datasheet: SiA817EDJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3795 ea
Line Total: USD 0.38 
Availability - 49348
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16
Ship by Fri. 22 Nov to Wed. 27 Nov
MOQ : 1
Multiples : 1
1 : USD 0.9809
10 : USD 0.9599
30 : USD 0.9465
100 : USD 0.9331

49348
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3795
10 : USD 0.2887
100 : USD 0.2335
500 : USD 0.207
1000 : USD 0.1921
3000 : USD 0.1644
9000 : USD 0.1576
45000 : USD 0.1541

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Vgs - Gate-Source Voltage
Qg - Gate Charge
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Forward Transconductance - Min
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Rise Time
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Typical Turn-Off Delay Time
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We are delighted to provide the SiA817EDJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SiA817EDJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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2.05 mm2.05 mm SiA817EDJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAK SC-70-6L Dual with Schottky Diode K LITTLE FOOT plus Schottky power MOSFET G 6 S 5 Thermally enhanced PowerPAK SC-70 package 4 K - Small footprint area D - Low on-resistance - Thin 0.75 mm profile 1 Typical ESD protection (MOSFET): 1500 V (HBM) 2 A 3 NC 111 100 % R tested g D Top View Bottom View Material categorization: for definitions of compliance Marking code: HE please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS S K MOSFET Portable devices such as V (V) -30 DS smart phones, tablet PCs, R max. ( ) at V = -10 V 0.065 DS(on) GS and mobile computing R max. ( ) at V = -4.5 V 0.080 DS(on) GS - Battery charger switch R max. ( ) at V = -3.7 V 0.092 G DS(on) GS - Buck converter R max. ( ) at V = -2.5 V 0.125 DS(on) GS - Power management Q typ. (nC) 6.6 g a I (A) -4.5 D D A SCHOTTKY V (V) 30 KA P-Channel MOSFET V (V) at 1 A 0.56 F a I (A) 2 F Configuration Dual plus integrated Schottky ORDERING INFORMATION Package PowerPAK SC-70 Lead (Pb)-free and halogen-free SiA817EDJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage (MOSFET) V -30 DS Reverse voltage (Schottky) V 30 V KA Gate-source voltage (MOSFET) V 12 GS a T = 25 C -4.5 C a T = 70 C -4.5 C Continuous drain current (T = 150 C) (MOSFET) I J D b, c T = 25 C -4.2 A b, c T = 70 C -3.4 A Pulsed drain current (MOSFET) (t = 300 s) I -15 A DM a T = 25 C -4.5 Continuous source-drain diode current C I S b, c (MOSFET diode conduction) T = 25 C -1.6 A b Average forward current (Schottky) I 2 F Pulsed forward current (Schottky) I 3 FM T = 25 C 6.5 C T = 70 C 5 C Maximum power dissipation (MOSFET) b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A P W D T = 25 C 6.8 C T = 70 C 4.3 C Maximum power dissipation (Schottky) b, c T = 25 C 1.6 A b, c T = 70 C 1 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e Soldering recommendations (peak temperature) 260 S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2202.05 mm055 mmSiA817EDJ www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, f Maximum junction-to-ambient (MOSFET) t 5 s R 52 65 thJA Maximum junction-to-case (drain) (MOSFET) Steady state R 12.5 16 thJC C/W b, f Maximum junction-to-ambient (Schottky) t 5 s R 62 76 thJA Maximum junction-to-case (drain) (Schottky) Steady state R 15 18.5 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 110 C/W SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T --23 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.7 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.6 - -1.3 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-source leakage I GSS V = 0 V, V = 12 V - - 10 DS GS A V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I DSS V = -30 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V 5 V, V = -10 V -8 - - A D(on) DS GS V = -10 V, I = -3 A - 0.054 0.065 GS D V = -4.5 V, I = -2 A - 0.065 0.080 GS D a Drain-source on-state resistance R DS(on) V = -3.7 V, I = -1 A - 0.070 0.092 GS D V = -2.5 V, I = -1 A - 0.095 0.125 GS D a Forward transconductance g V = -10 V, I = -3 A - 9 - S fs DS D b Dynamic Input capacitance C -600 - iss Output capacitance C V = -15 V, V = 0 V, f = 1 MHz -55 - pF oss DS GS Reverse transfer capacitance C -50 - rss V = -15 V, V = -10 V, I = -4.2 A -14 23 DS GS D Total gate charge Q g -6.6 10 nC V = -5 V, V = -4.5 V, I = -4.2 A Gate-source charge Q -1.3 - gs DS GS D Gate-drain charge Q -2 - gd Gate resistance R f = 1 MHz 1.1 5.5 11 g Turn-on delay time t -20 40 d(on) Rise time t -20 40 r V = -15 V, R = 4.4 DD L I -3.4 A, V = -4.5 V, R = 1 Turn-off delay time t D GEN g -23 45 d(off) Fall time t -10 20 f ns Turn-on delay time t -10 20 d(on) Rise time t -10 20 r V = -15 V, R = 4.4 DD L I -3.4 A, V = -10 V, R = 1 Turn-off delay time t D GEN g -25 50 d(off) Fall time t -7 15 f S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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