X-On Electronics has gained recognition as a prominent supplier of SiA817EDJ-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SiA817EDJ-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SiA817EDJ-T1-GE3 Vishay

SiA817EDJ-T1-GE3 electronic component of Vishay
SiA817EDJ-T1-GE3 Vishay
SiA817EDJ-T1-GE3 MOSFETs
SiA817EDJ-T1-GE3  Semiconductors

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Part No. SiA817EDJ-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET -30V .065Ohm10V 4.5A P-Ch G-III
Datasheet: SiA817EDJ-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4962 ea
Line Total: USD 0.5 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.275

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 0.6217
10 : USD 0.5068
100 : USD 0.3787
500 : USD 0.2976
1000 : USD 0.23

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 1
Multiples : 1
1 : USD 0.6217
10 : USD 0.5068
100 : USD 0.3787
500 : USD 0.2976
1000 : USD 0.23

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.2184

0
Ship by Wed. 14 May to Mon. 19 May
MOQ : 1
Multiples : 1
1 : USD 2.0384
10 : USD 1.7104
30 : USD 1.1808
100 : USD 1.0233
500 : USD 0.8809
1000 : USD 0.8509

0
Ship by Mon. 05 May to Wed. 07 May
MOQ : 1
Multiples : 1
1 : USD 0.4962
10 : USD 0.3888
100 : USD 0.2806
500 : USD 0.2255
1000 : USD 0.1881
3000 : USD 0.1573
6000 : USD 0.1573
9000 : USD 0.1562

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 42
Multiples : 1
42 : USD 0.1599
100 : USD 0.1505

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1394
6000 : USD 0.1312

0
Ship by Wed. 07 May to Tue. 13 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1382
6000 : USD 0.1301

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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Forward Transconductance - Min
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Rise Time
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We are delighted to provide the SiA817EDJ-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SiA817EDJ-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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2.05 mm2.05 mm SiA817EDJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAK SC-70-6L Dual with Schottky Diode K LITTLE FOOT plus Schottky power MOSFET G 6 S 5 Thermally enhanced PowerPAK SC-70 package 4 K - Small footprint area D - Low on-resistance - Thin 0.75 mm profile 1 Typical ESD protection (MOSFET): 1500 V (HBM) 2 A 3 NC 111 100 % R tested g D Top View Bottom View Material categorization: for definitions of compliance Marking code: HE please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS S K MOSFET Portable devices such as V (V) -30 DS smart phones, tablet PCs, R max. ( ) at V = -10 V 0.065 DS(on) GS and mobile computing R max. ( ) at V = -4.5 V 0.080 DS(on) GS - Battery charger switch R max. ( ) at V = -3.7 V 0.092 G DS(on) GS - Buck converter R max. ( ) at V = -2.5 V 0.125 DS(on) GS - Power management Q typ. (nC) 6.6 g a I (A) -4.5 D D A SCHOTTKY V (V) 30 KA P-Channel MOSFET V (V) at 1 A 0.56 F a I (A) 2 F Configuration Dual plus integrated Schottky ORDERING INFORMATION Package PowerPAK SC-70 Lead (Pb)-free and halogen-free SiA817EDJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage (MOSFET) V -30 DS Reverse voltage (Schottky) V 30 V KA Gate-source voltage (MOSFET) V 12 GS a T = 25 C -4.5 C a T = 70 C -4.5 C Continuous drain current (T = 150 C) (MOSFET) I J D b, c T = 25 C -4.2 A b, c T = 70 C -3.4 A Pulsed drain current (MOSFET) (t = 300 s) I -15 A DM a T = 25 C -4.5 Continuous source-drain diode current C I S b, c (MOSFET diode conduction) T = 25 C -1.6 A b Average forward current (Schottky) I 2 F Pulsed forward current (Schottky) I 3 FM T = 25 C 6.5 C T = 70 C 5 C Maximum power dissipation (MOSFET) b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A P W D T = 25 C 6.8 C T = 70 C 4.3 C Maximum power dissipation (Schottky) b, c T = 25 C 1.6 A b, c T = 70 C 1 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e Soldering recommendations (peak temperature) 260 S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2202.05 mm055 mmSiA817EDJ www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, f Maximum junction-to-ambient (MOSFET) t 5 s R 52 65 thJA Maximum junction-to-case (drain) (MOSFET) Steady state R 12.5 16 thJC C/W b, f Maximum junction-to-ambient (Schottky) t 5 s R 62 76 thJA Maximum junction-to-case (drain) (Schottky) Steady state R 15 18.5 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 110 C/W SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T --23 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.7 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.6 - -1.3 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-source leakage I GSS V = 0 V, V = 12 V - - 10 DS GS A V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I DSS V = -30 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V 5 V, V = -10 V -8 - - A D(on) DS GS V = -10 V, I = -3 A - 0.054 0.065 GS D V = -4.5 V, I = -2 A - 0.065 0.080 GS D a Drain-source on-state resistance R DS(on) V = -3.7 V, I = -1 A - 0.070 0.092 GS D V = -2.5 V, I = -1 A - 0.095 0.125 GS D a Forward transconductance g V = -10 V, I = -3 A - 9 - S fs DS D b Dynamic Input capacitance C -600 - iss Output capacitance C V = -15 V, V = 0 V, f = 1 MHz -55 - pF oss DS GS Reverse transfer capacitance C -50 - rss V = -15 V, V = -10 V, I = -4.2 A -14 23 DS GS D Total gate charge Q g -6.6 10 nC V = -5 V, V = -4.5 V, I = -4.2 A Gate-source charge Q -1.3 - gs DS GS D Gate-drain charge Q -2 - gd Gate resistance R f = 1 MHz 1.1 5.5 11 g Turn-on delay time t -20 40 d(on) Rise time t -20 40 r V = -15 V, R = 4.4 DD L I -3.4 A, V = -4.5 V, R = 1 Turn-off delay time t D GEN g -23 45 d(off) Fall time t -10 20 f ns Turn-on delay time t -10 20 d(on) Rise time t -10 20 r V = -15 V, R = 4.4 DD L I -3.4 A, V = -10 V, R = 1 Turn-off delay time t D GEN g -25 50 d(off) Fall time t -7 15 f S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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