2.05 mm2.05 mm SiA817EDJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PowerPAK SC-70-6L Dual with Schottky Diode K LITTLE FOOT plus Schottky power MOSFET G 6 S 5 Thermally enhanced PowerPAK SC-70 package 4 K - Small footprint area D - Low on-resistance - Thin 0.75 mm profile 1 Typical ESD protection (MOSFET): 1500 V (HBM) 2 A 3 NC 111 100 % R tested g D Top View Bottom View Material categorization: for definitions of compliance Marking code: HE please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS S K MOSFET Portable devices such as V (V) -30 DS smart phones, tablet PCs, R max. ( ) at V = -10 V 0.065 DS(on) GS and mobile computing R max. ( ) at V = -4.5 V 0.080 DS(on) GS - Battery charger switch R max. ( ) at V = -3.7 V 0.092 G DS(on) GS - Buck converter R max. ( ) at V = -2.5 V 0.125 DS(on) GS - Power management Q typ. (nC) 6.6 g a I (A) -4.5 D D A SCHOTTKY V (V) 30 KA P-Channel MOSFET V (V) at 1 A 0.56 F a I (A) 2 F Configuration Dual plus integrated Schottky ORDERING INFORMATION Package PowerPAK SC-70 Lead (Pb)-free and halogen-free SiA817EDJ-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage (MOSFET) V -30 DS Reverse voltage (Schottky) V 30 V KA Gate-source voltage (MOSFET) V 12 GS a T = 25 C -4.5 C a T = 70 C -4.5 C Continuous drain current (T = 150 C) (MOSFET) I J D b, c T = 25 C -4.2 A b, c T = 70 C -3.4 A Pulsed drain current (MOSFET) (t = 300 s) I -15 A DM a T = 25 C -4.5 Continuous source-drain diode current C I S b, c (MOSFET diode conduction) T = 25 C -1.6 A b Average forward current (Schottky) I 2 F Pulsed forward current (Schottky) I 3 FM T = 25 C 6.5 C T = 70 C 5 C Maximum power dissipation (MOSFET) b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A P W D T = 25 C 6.8 C T = 70 C 4.3 C Maximum power dissipation (Schottky) b, c T = 25 C 1.6 A b, c T = 70 C 1 A Operating junction and storage temperature range T , T -55 to +150 J stg C d, e Soldering recommendations (peak temperature) 260 S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 2202.05 mm055 mmSiA817EDJ www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, f Maximum junction-to-ambient (MOSFET) t 5 s R 52 65 thJA Maximum junction-to-case (drain) (MOSFET) Steady state R 12.5 16 thJC C/W b, f Maximum junction-to-ambient (Schottky) t 5 s R 62 76 thJA Maximum junction-to-case (drain) (Schottky) Steady state R 15 18.5 thJC Notes a. Package limited b. Surface mounted on 1 x 1 FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 110 C/W SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = -250 A -30 - - V DS GS D V temperature coefficient V /T --23 - DS DS J I = -250 A mV/C D V temperature coefficient V /T -2.7 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = -250 A -0.6 - -1.3 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-source leakage I GSS V = 0 V, V = 12 V - - 10 DS GS A V = -30 V, V = 0 V - - -1 DS GS Zero gate voltage drain current I DSS V = -30 V, V = 0 V, T = 55 C - - -10 DS GS J a On-state drain current I V 5 V, V = -10 V -8 - - A D(on) DS GS V = -10 V, I = -3 A - 0.054 0.065 GS D V = -4.5 V, I = -2 A - 0.065 0.080 GS D a Drain-source on-state resistance R DS(on) V = -3.7 V, I = -1 A - 0.070 0.092 GS D V = -2.5 V, I = -1 A - 0.095 0.125 GS D a Forward transconductance g V = -10 V, I = -3 A - 9 - S fs DS D b Dynamic Input capacitance C -600 - iss Output capacitance C V = -15 V, V = 0 V, f = 1 MHz -55 - pF oss DS GS Reverse transfer capacitance C -50 - rss V = -15 V, V = -10 V, I = -4.2 A -14 23 DS GS D Total gate charge Q g -6.6 10 nC V = -5 V, V = -4.5 V, I = -4.2 A Gate-source charge Q -1.3 - gs DS GS D Gate-drain charge Q -2 - gd Gate resistance R f = 1 MHz 1.1 5.5 11 g Turn-on delay time t -20 40 d(on) Rise time t -20 40 r V = -15 V, R = 4.4 DD L I -3.4 A, V = -4.5 V, R = 1 Turn-off delay time t D GEN g -23 45 d(off) Fall time t -10 20 f ns Turn-on delay time t -10 20 d(on) Rise time t -10 20 r V = -15 V, R = 4.4 DD L I -3.4 A, V = -10 V, R = 1 Turn-off delay time t D GEN g -25 50 d(off) Fall time t -7 15 f S13-0196-Rev. A, 28-Jan-13 Document Number: 62820 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000