New Product SiA912DJ Vishay Siliconix Dual N-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.040 at V = 4.5 V 4.5 GS New Thermally Enhaced PowerPAK RoHS COMPLIANT SC-70 Package 0.048 at V = 2.5 V 12 4.5 4.5 nC GS - Small Footprint Area 0.063 at V = 1.8 V 4.5 GS APPLICATIONS PowerPAK SC-70-6 Dual Load Switch for Portable Applications 1 S 1 D D 1 2 2 G 1 Marking Code 3 D 1 D 2 C A X D 1 D 2 Part code 6 X X X G 2 G G 1 2 Lot Traceability 5 2.05 mm and Date code 2.05 mm S 2 4 S S 1 2 Ordering Information: SiA912DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 12 DS V Gate-Source Voltage V 8 GS a T = 25 C C 4.5 a T = 70 C C 4.5 Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C 4.5 A a, b, c A T = 70 C 4.5 A I Pulsed Drain Current 20 DM a T = 25 C C 4.5 Continuous Source-Drain Diode Current I b, c S T = 25 C A 1.6 T = 25 C 6.5 C T = 70 C 5 C P Maximum Power Dissipation W D b, c T = 25 C A 1.9 b, c T = 70 C A 1.2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 52 65 thJA Maximum Junction-to-Ambient C/W Maximum Junction-to-Case (Drain) Steady State R 12.5 16 thJC Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiA912DJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 12 V DS GS D V Temperature Coefficient V /T 12 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 2.8 GS(th) GS(th) J V V = V , I = 250 A V Gate-Source Threshold Voltage 0.4 1.0 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 ns GSS DS GS V = 12 V, V = 0 V - 1 DS GS I A DSS Zero Gate Voltage Drain Current V = 12 V, V = 0 V, T = 55 C - 10 DS GS J a I V 5 V, V = 4.5 V A - 20 On-State Drain Current D(on) DS GS V = 4.5 V, I = 4.2 A 0.033 0.040 GS D R V = 2.5 V, I = 3.8 A 0.039 0.048 DS(on) GS D a Drain-Source On-State Resistance V = 1.8 V, I = 1.6 A 0.051 0.063 GS D a g V = 6 V, I = 4.2 A 13 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 400 iss Output Capacitance C V = 6 V, V = 0 V, f = 1 MHz 120 pF oss DS GS C Reverse Transfer Capacitance 70 rss V = 6 V, V = 8 V, I = 5.5 A 7.5 11.5 DS GS D Total Gate Charge Q g 4.5 6.8 nC Gate-Source Charge Q V = 6 V, V = 4.5 V, I = 5.5 A 0.6 gs DS GS D Q Gate-Drain Charge 0.8 gd Gate Resistance R f = 1 MHz 2.5 g t Turn-on Delay Time 510 d(on) Rise Time t 15 25 r V = 6 V, R = 1.4 DD L Turn-Off Delay Time t 35 55 d(off) I 4.4 A, V = 4.5 V, R = 1 D GEN g t Fall Time 15 25 f ns Turn-on Delay Time t 510 d(on) Rise Time t 10 15 r V = 6 V, R = 1.6 DD L Turn-Off Delay Time t 15 25 d(off) I 4.4 A, V = 8 V, R = 1 D GEN g t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 4.5 S C A I Pulse Diode Forward Current 20 SM V I = 4.4 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 15 30 ns rr Q Body Diode Reverse Recovery Charge 820 nC rr I = 4.4 A, di/dt = 100 A/s, T = 25 C F J t ns Reverse Recovery Fall Time 8.5 a t Reverse Recovery Rise Time 6.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74953 2 S-80436-Rev. B, 03-Mar-08