New Product SiA426DJ Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET 0.0236 at V = 10 V 4.5 GS New Thermally Enhanced PowerPAK RoHS 0.0263 at V = 4.5 V 20 4.5 7.9 nC GS COMPLIANT SC-70 Package - Small Footprint Area 0.0361 at V = 2.5 V 4.5 GS - Low On-Resistance 100 % R Tested g PowerPAK SC-70-6L-Single APPLICATIONS Load Switch D 1 D 2 Marking Code D 3 G A F X D Part code G 6 X X X S D Lot Traceability 5 and Date code S 2.05 mm 2.05 mm 4 S Ordering Information: SiA426DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 12 GS a T = 25 C 4.5 C a T = 70 C 4.5 C a I Continuous Drain Current (T = 150 C) D J a, b, c T = 25 C 4.5 A a, b, c T = 70 C A 4.5 A I Pulsed Drain Current 20 DM a T = 25 C 4.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C 2.9 A T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 28 36 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 5.3 6.5 thJC Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiA426DJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 25 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.7 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 10 V, I = 9.9 A 0.0196 0.0236 GS D a R V = 4.5 V, I = 9.4 A 0.0219 0.0263 Drain-Source On-State Resistance DS(on) GS D V = 2.5 V, I = 8 A 0.0301 0.0361 GS D a g V = 10 V, I = 9.9 A 20 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1020 iss C V = 10 V, V = 0 V, f = 1 MHz Output Capacitance 160 pF oss DS GS C Reverse Transfer Capacitance 70 rss V = 10 V, V = 10 V, I = 9.9 A 17.5 27 DS GS D Q Total Gate Charge g 7.9 16 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 9.9 A 2.1 gs DS GS D Q Gate-Drain Charge 1.1 gd R Gate Resistance f = 1 MHz 0.6 3 6 g t Turn-On Delay Time 12 18 d(on) t Rise Time V = 10 V, R = 1.3 11 17 r DD L I 7.9 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 27 41 D GEN g d(off) t Fall Time 11 17 f ns Turn-On Delay Time t 714 d(on) t Rise Time V = 10 V, R = 1.3 10 15 r DD L I 7.9 A, V = 10 V, R = 1 Turn-Off Delay Time t 20 30 D GEN g d(off) t Fall Time 816 f Drain-Source Body Diode Characteristics c I T = 25 C Continuous Source-Drain Diode Current S C 4.5 A Pulse Diode Forward Current I 20 SM V I = 7.9 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS Body Diode Reverse Recovery Time t 16 24 ns rr Q Body Diode Reverse Recovery Charge 612 nC rr I = 7.9 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 7 a ns t Reverse Recovery Rise Time 8 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Package Limited Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68630 2 S-81002-Rev. A, 05-May-08