Si7922DN Vishay Siliconix Dual N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFET 0.195 at V = 10 V 2.5 GS New Low Thermal Resistance PowerPAK RoHS 100 COMPLIANT Package, 1/3 the Space of An SO-8 While 0.230 at V = 6 V 2.3 GS Thermally Comparable PWM Optimized APPLICATIONS DC/DC Primary-Side Switch PowerPAK 1212-8 48 V Battery Monitoring S1 3.30 mm 3.30 mm 1 D D 1 2 G1 2 S2 3 G2 4 D1 8 D1 7 G G 1 2 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7922DN-T1-E3 (Lead (Pb)-free) Si7922DN-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 2.5 1.8 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 1.8 1.3 A A I 10 Pulsed Drain Current DM Avalanche Current I 5 AS 0.1 mH Single Avalanche Energy E 1.25 mJ AS a I 2.2 1.1 A Continuous Source Current (Diode Conduction) S T = 25 C 2.6 1.3 A a P W Maximum Power Dissipation D T = 85 C 1.4 0.69 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 10 s 38 48 a R Maximum Junction-to-Ambient thJA C/W Steady State 77 94 Maximum Junction-to-Case (Drain) Steady State R 4.3 5.4 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7922DN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2.5 3.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 100 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 85 C 5 DS GS J a I V 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 2.5 A 0.162 0.195 GS D a R Drain-Source On-State Resistance DS(on) V = 6 V, I = 2.3 A 0.190 0.230 GS D a g V = 10 V, I = 2.5 A 5.3 S Forward Transconductance fs DS D a V I = 2.2 A, V = 0 V 0.8 1.2 V Diode Forward Voltage SD S GS b Dynamic Q Total Gate Charge 5.2 8 g Gate-Source Charge Q V = 50 V, V = 10 V, I = 2.5 A 1.1 nC gs DS GS D Q Gate-Drain Charge 1.9 gd Gate Resistance R 1.7 g t Turn-On Delay Time 715 d(on) Rise Time t 11 20 V = 50 V, R = 50 r DD L I 1 A, V = 4.5 V, R = 6 t Turn-Off DelayTime D GEN G 815 ns d(off) Fall Time t 11 20 f t I = 2.2 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 40 80 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS T = 25 C, unless otherwise noted A 10 10 V = 10 thru 6 V GS 8 8 6 6 5 V 4 4 T = 125 C C 2 2 25 C 3 V 4 V - 55 C 0 0 01234 5678 0123456 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 72031 2 S-81544-Rev. E, 07-Jul-08 I - Drain Current (A) D I - Drain Current (A) D