SiA414DJ Vishay Siliconix N-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET a New Thermally Enhanced PowerPAK V (V) R () Q (Typ.) I (A) DS DS(on) g D SC-70 Package 0.011 at V = 4.5 V 12 GS - Small Footprint Area Material categorization: 0.013 at V = 2.5 V 12 GS For definitions of compliance please see 0.016 at V = 1.8 V 8 12 19 nC GS www.vishay.com/doc 99912 0.022 at V = 1.5 V 12 GS APPLICATIONS 0.041 at V = 1.2 V 12 GS Load Switch for Portable Applications D PowerPAK SC-70-6L-Single Marking Code 1 D A C X 2 Part code D X X X G 3 Lot Traceability G and Date code D 6 S D 5 Ordering Information: S SiA414DJ-T4-GE3 (Lead (Pb)-free and Halogen-free) S 2.05 mm 2.05 mm N-Channel MOSFET 4 SiA414DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V 8 DS V Gate-Source Voltage V 5 GS a T = 25 C C 12 a T = 70 C C 12 Continuous Drain Current (T = 150 C) I J D a, b, c T = 25 C A 12 b, c T = 70 C A 11.6 A Pulsed Drain Current I 40 DM a T = 25 C C 12 Continuous Source-Drain Diode Current I b, c S T = 25 C A 2.9 T = 25 C 19 C T = 70 C 12 C P Maximum Power Dissipation W D b, c T = 25 C A 3.5 b, c T = 70 C A 2.2 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 28 36 thJA Maximum Junction-to-Ambient C/W R 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 73954 www.vishay.com For more information please contact: pmostechsupport vishay.com S12-1141-Rev. C, 21-May-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiA414DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 8V DS GS D V Temperature Coefficient V /T 9 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.35 0.8 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Source Leakage 100 nA GSS DS GS V = 8 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 8 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V 4.5 V, I = 9.7 A 0.009 0.011 GS D V 2.5 V, I = 9 A 0.011 0.013 GS D a R V 1.8 V, I = 8.1 A 0.013 0.016 Drain-Source On-State Resistance DS(on) GS D V 1.5 V, I = 4.5 A 0.016 0.022 GS D V 1.2 V, I = 2.4 A 0.027 0.041 GS D a g V = 4 V, I = 9.7 A 50 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 1800 iss C V = 4 V, V = 0 V, f = 1 MHz Output Capacitance 650 pF oss DS GS C Reverse Transfer Capacitance 450 rss V = 4 V, V = 5 V, I = 10 A 21 32 DS GS D Q Total Gate Charge g 19 29 nC Q Gate-Source Charge V = 4 V, V = 4.5 V, I = 10 A 2.5 gs DS GS D Q Gate-Drain Charge 6.5 gd R Gate Resistance f = 1 MHz 2.5 g Turn-on Delay Time t 12 20 d(on) t Rise Time 10 15 r V = 4 V, R = 0.4 DD L Turn-Off Delay Time t 65 100 d(off) I 10 A, V = 4.5 V, R = 1 D GEN g t Fall Time 20 30 f ns Turn-on Delay Time t 10 15 d(on) t Rise Time 10 15 r V = 4 V, R = 0.4 DD L t Turn-Off Delay Time 35 55 d(off) I 10 A, V = 5 V, R = 1 D GEN g t Fall Time 10 15 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 12 S C A I Pulse Diode Forward Current 40 SM V I = 10 A, V 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 40 80 ns rr Q Body Diode Reverse Recovery Charge 20 40 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 12 a ns t Reverse Recovery Rise Time 28 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73954 For more information please contact: pmostechsupport vishay.com 2 S12-1141-Rev. C, 21-May-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000