End of Life. Last Available Purchase Date is 31-Dec-2014 Si9910 Vishay Siliconix 1 Adaptive Power MOSFET Driver FEATURES dv/dt and di/dt Control t Shoot-Through Current Limiting Compatible with Wide Range of MOSFET Devices rr Undervoltage Protection Low Quiescent Current Bootstrap and Charge Pump Compatible (High-Side Drive) Short-Circuit Protection CMOS Compatible Inputs DESCRIPTION The Si9910 Power MOSFET driver provides optimized gate Fault protection circuitry senses an undervoltage or output drive signals, protection circuitry and logic level interface. Very short-circuit condition and disables the power MOSFET. low quiescent current is provided by a CMOS buffer and a Addition of one external resistor limits maximum di/dt of the high-current emitter-follower output stage. This efficiency external Power MOSFET. A fast feedback circuit may be used allows operation in high-voltage bridge applications with to limit shoot-through current during t (diode reverse recovery rr bootstrap or charge-pump floating power supply time) in a bridge configuration. techniques. The non-inverting output configuration minimizes current The Si9910 is available in both standard and lead (Pb)-free drain for an n-channel on state. The logic input is internally 8-pin plastic DIP and SOIC packages which are specified to diode clamped to allow simple pull-down in high-side drives. operate over the industrial temperature range of 40 C to 85 C. FUNCTIONAL BLOCK DIAGRAM R3 V DS *100 k V DD C1 DRAIN Undervoltage/ *2 to 5 pF Overcurrent R2 PULL-UP Protection *250 2- s PULL-DOWN Delay INPUT I SENSE R1 *0.1 V SS * Typical Values 1. Patent Number 484116. Document Number: 70009 www.vishay.com S-42043Rev. H, 15-Nov-04 1Si9910 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltages Referenced to V Pin Operating Temperature . 40 to 85 C SS Junction Temperature (T ) 150 C V Supply Range . 0.3 V to 18 V J DD a Power Dissipation (Package) Pin 1, 4, 5, 7, 8 0.3 V to V + 0.3 V DD b 8-Pin SOIC (Y Suffix) . 700 mW Pin 2 . 0.7 V to V + 0.3 V b DD . 700 mW 8-Pin Plastic DIP (J Suffix) Input Current . 20 mA Notes Peak Current (I )1 A pk a. Device mounted with all leads soldered or welded to PC board. Storage Temperature 65 to 150 C b. Derate 5.6 mW/ C above 25 C. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. a SPECIFICATIONS Test Conditions Limits Unless Otherwise SpecifiedUnless Otherwise Specified V 10.8 V to 16.5 V DD c b c Parameter Symbol Min Typ Max Unit T = OperatingTemperature Range A Input High Level Input Voltage V 0.70 x V 7.4 IH DD Low Level Input Voltage V 6.0 0.35 x V V IL DD Input Voltage Hysteresis V 0.90 2.0 3.0 h High Level Input Current I V = V 1 IH IN DD AA Low Level Input Current I V = 0 V 1 IL IN Output High Level Output Voltage V I = 200 mA V 3 10.7 OH OH DD Low Level Output Voltage V I = 200 mA 1.3 3 OL OL Undervoltage Lockout V 8.3 9.2 10.6 UVLO VV Max I = 2 mA, Input High S I Pin Threshold V 0.5 0.66 0.8 SENSE TH 100 mV Change on Drain Voltage Drain-Source Maximum V Input High 8.3 9.1 10.2 DS Input Current for V Input I 12 20.0 A DS VDS Peak Output Source Current I 1 A OS+ Peak Output Sink Current I 1 OS Supply Supply Range V 10.8 16.5 V DD I Output High, No Load 0.1 1 DD1 Supply CurrentSupply Current AA I Output Low, No Load 100 500 DD2 Dynamic Propagation Delay Time Low to High Level t 120 PLH Propagation Delay Time High to Low Level t 135 PHL CC = 2000 pF = 2000 pF nsns LL Rise Time t 50 r Fall Time t 35 f Overcurrent Sense Delay (V ) t 1 S DS DS Input Capacitance C 5 pF in Notes a. Refer to PROCESS OPTION FLOWCHART for additional information. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum. Document Number: 70009 www.vishay.com S-42043Rev. H, 15-Nov-04 2