2 mm Si8851EDB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a, d V (V) R ( ) Max. I (A) Q (Typ.) DS DS(on) D g Small 2.4 mm x 2 mm outline area 0.0080 at V = -4.5 V -16.7 GS Low 0.4 mm max. profile 0.0086 at V = -3.7 V -16.1 GS -20 70 nC 0.0110 at V = -2.5 V -14.2 Typical ESD protection 6000 V HBM GS 0.0185 at V = -1.8 V -11 GS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Power MICRO FOOT 2.4 x 2 S APPLICATIONS 5 4 3 Battery switch / load switch 0.4 mm 2 1 Power management G For smart phones, tablet PCs, and A B mobile computing C G D E D F A1 S D Backside View Bump Side View P-Channel MOSFET Ordering Information: Si8851EDB-T2-E1 (Lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V -20 DS V Gate-Source Voltage V 8 GS a T = 25 C -16.7 A a T = 70 C -13.4 A Continuous Drain Current (T = 150 C) I J D b T = 25 C -7.7 A b T = 70 C -6.2 A A Pulsed Drain Current (t = 100 s) I -80 DM a T = 25 C -2.6 C Continuous Source-Drain Diode Current I S b T = 25 C -0.55 A a T = 25 C 3.1 A a T = 70 C 2 A Maximum Power Dissipation P W D b T = 25 C 0.66 A b T = 70 C 0.43 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg VPR 260 C c Package Reflow Conditions IR/Convection 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 5 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Based on T = 25 C. A THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTypicalMaximumUnit a, b Maximum Junction-to-Ambient t = 5 s 30 40 R C/W thJA c, d Maximum Junction-to-Ambient t = 5 s 145 188 Notes a. Surface mounted on 1 x 1 FR4 board with full copper. b. Maximum under steady state conditions is 85 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper. d. Maximum under steady state conditions is 330 C/W. S15-1120-Rev. B, 18-May-15 Document Number: 64197 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 8851 xxx 2.4 mmSi8851EDB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -20 - - V DS GS D V Temperature Coefficient V /T --11 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -3 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.45 - -1 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 0.5 DS GS Gate-Source Leakage I GSS V = 0 V, V = 8 V - - 10 DS GS A V = -20 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I DSS V = -20 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -7 A - 0.0060 0.0080 GS D V = -3.7 V, I = -7 A - 0.0065 0.0086 GS D a Drain-Source On-State Resistance R DS(on) V = -2.5 V, I = -5 A - 0.0081 0.0110 GS D V = -1.8 V, I = -3 A - 0.0130 0.0185 GS D a Forward Transconductance g V = -10 V, I = -7 A - 50 - S fs DS D b Dynamic Input Capacitance C - 6900 - iss Output Capacitance C V = -10 V, V = 0 V, f = 1 MHz - 640 - pF oss DS GS Reverse Transfer Capacitance C -715- rss V = -10 V, V = -8 V, I = -5 A - 120 180 DS GS D Total Gate Charge Q g - 70 105 nC Gate-Source Charge Q V = -10 V, V = -4.5 V, I = -5 A -8 - gs DS GS D Gate-Drain Charge Q -14- gd Gate Resistance R V = -0.1 V, f = 1 MHz - 2.3 - g GS Turn-On Delay Time t -35 70 d(on) Rise Time t -40 80 r V = -10 V, R = 2 DD L I -5 A, V = -4.5 V, R = 1 D GEN g Turn-Off Delay Time t -115230 d(off) Fall Time t -35 70 f ns Turn-On Delay Time t -15 30 d(on) Rise Time t -10 20 r V = -10 V, R = 2 DD L I -5 A, V = -8 V, R = 1 D GEN g Turn-Off Delay Time t -110220 d(off) Fall Time t -25 50 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - -2.6 S A A Pulse Diode Forward Current (t = 100 s) I -- -80 SM Body Diode Voltage V I = -5 A, V = 0 V - -0.8 -1.2 V SD S GS Body Diode Reverse Recovery Time t -40 80 ns rr Body Diode Reverse Recovery Charge Q -30 60 nC rr I = -5 A, dI/dt = 100 A/s, F = 25 C T J Reverse Recovery Fall Time t -16 - a ns Reverse Recovery Rise Time t -24 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1120-Rev. B, 18-May-15 Document Number: 64197 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000