1.6 mm Si8902AEDB www.vishay.com Vishay Siliconix N-Channel 24 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a V (V) R () Max. I (A) S1S2 S1S2 S1S2 Small 2.4 mm x 1.6 mm outline 0.028 at V = 4.5 V 5.9 GS Thin 0.6 mm max. height 0.029 at V = 3.7 V 5.8 GS 24 0.031 at V = 2.5 V 5.6 Typical ESD protection 5000 V (HBM) GS 0.037 at V = 1.8 V 5.1 GS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS S MICRO FOOT 2.4 x 1.6 1 S 1 2 Battery protection switch G 1 3 S 2 Bi-directional switch 4 G 1 R 1 S 6 1 G 5 2 R 1 S 2 G 2 Backside View Bump Side View Marking Code: 8902AE Ordering Information: N-Channel S 2 Si8902AEDB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Source 1-to-Source 2 Voltage V 24 S1S2 V Gate-Source Voltage V 12 GS b T = 25 C 11 C b T = 85 C 7.9 Continuous Source 1-to-Source 2 Current C I S1S2 a (T = 150 C) J T = 25 C 5.9 A A a T = 85 C 4.3 A Pulsed Source 1-to-Source 2 Current (t = 100 s) I 40 SM b T = 25 C 5.7 C b T = 85 C 3 C Maximum Power Dissipation P W D a T = 25 C 1.7 A a T = 85 C 0.9 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C c Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, d Maximum Junction-to-Ambient t 5 s R 60 75 thJA C/W b Maximum Junction-to-Case Steady State R 18 22 thJC Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 5 s. b. The case is defined as the top surface of the package. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. Maximum under steady state conditions is 120 C/W. S15-1171-Rev. B, 25-May-15 Document Number: 62948 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 8902AE xxx 2.4 mmSi8902AEDB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Source 1-to-Source 2 Breakdown Voltage V V = 0 V, I = 250 A 24 - - V S1S2 GS S V Temperature Coefficient V /T I = 250 A - 3 - mV/C GS(th) GS(th) J S Gate-Source Threshold Voltage V V = V , I = 250 A 0.4 - 0.9 V GS(th) SS GS S V = 0 V, V = 4.5 V - - 0.2 A SS GS Gate-Source Leakage I GSS V = 0 V, V = 12 V - - 10 mA SS GS V = 24 V, V = 0 V - - 1 SS GS Zero Gate Voltage Source Current I A S1S2 V = 24 V, V = 0 V, T = 85 C - - 10 SS GS J a On-State Source Current I V 5 V, V = 4.5 V 5 - - A S(on) SS GS V = 4.5 V, I = 1 A - 0.0215 0.0280 GS SS V = 3.7 V, I = 1 A - 0.0222 0.0290 GS SS a Source1-to-Source 2 On-State Resistance R S1S2 V = 2.5 V, I = 1 A - 0.0240 0.0310 GS SS V = 1.8 V, I = 1 A - 0.0260 0.0370 GS SS a Forward Transconductance g V = 10 V, I = 1 A - 15 - S fs SS SS b Dynamic Gate Resistance R f = 1 MHz - 5.3 - k g Turn-On Delay Time t -1.5 3 d(on) Rise Time t -3.57 r V = 12.5 V, R = 12.5 SS L I 1 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -2SS GEN g 550 d(off) Fall Time t -12 25 f s Turn-On Delay Time t -0.7 1.4 d(on) Rise Time t -1.32.6 r V = 12.5 V, R = 12.5 SS L I 1 A, V = 10 V, R = 1 Turn-Off Delay Time t -3SS GEN g 570 d(off) Fall Time t -12 25 f Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1171-Rev. B, 25-May-15 Document Number: 62948 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000