IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS -T Power-Transistor Product Summary V 120 V DS R (SMD version) 11.3 mW DS(on),max I 70 A D Features TM OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPB70N12S3-11 PG-TO263-3-2 3N1211 IPI70N12S3-11 PG-TO262-3-1 3N1211 IPP70N12S3-11 PG-TO220-3-1 3N1211 Maximum ratings, at T =25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit Continuous drain current I T =25C, V =10V 70 A D C GS T =100C, C 48 2) V =10V GS 1) I T =25C 280 Pulsed drain current D,pulse C 1) E I =35A 410 mJ Avalanche energy, single pulse AS D Avalanche current, single pulse I - 70 A AS V Gate source voltage - 20 V GS P T =25C Power dissipation 125 W tot C Operating and storage temperature T , T - -55 ... +175 C j stg Rev. 1.0 page 1 2016-06-20 IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 Values Parameter Symbol Conditions Unit min. typ. max. 1) Thermal characteristics R Thermal resistance, junction - case - - - 1.2 K/W thJC Thermal resistance, junction - R - - - 62 thJA ambient, leaded SMD version, device on PCB R minimal footprint - - 62 thJA 2 2) - - 40 6 cm cooling area Electrical characteristics, at T =25 C, unless otherwise specified j Static characteristics Drain-source breakdown voltage V V =0V, I = 1mA 120 - - V (BR)DSS GS D V V =V , I =83A Gate threshold voltage 2.0 3.0 4.0 GS(th) DS GS D V =120V, V =0V, DS GS Zero gate voltage drain current I - 0.01 0.1 A DSS T =25C j V =120V, V =0V, DS GS - 1 10 2) T =125C j I V =20V, V =0V Gate-source leakage current - - 100 nA GSS GS DS R V =10V, I =70A Drain-source on-state resistance - 9.7 11.6 mW DS(on) GS D V =10V, I =70A, GS D - 9.4 11.3 SMD version Rev. 1.0 page 2 2016-06-20