DMT6007LFGQ Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R Ensures On-State Losses are Minimized DS(ON) I Max D BV R Max DSS DS(ON) Excellent Q R Product (FOM) gd DS(ON) T = +25C C Small form factor thermally efficient package enables higher 6m V = 10V 80A density end products GS 60V 100% Unclamped Inductive Switching, Test in Production Ensures More Reliable And Robust End Application 8.5m V = 4.5V 70A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data Case: PowerDI 3333-8 Brushless DC Motor Control Case Material: Molded Plastic,Gree Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminal Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) PowerDI3333-8 Pin 1 S D S S G G D D D D S Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMT6007LFGQ-7 2,000/Tape & Reel PowerDI3333-8 DMT6007LFGQ-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT6007LFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 15 A I A D 12 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 80 C A I D 65 T = +70C C Maximum Continuous Body Diode Forward Current (Note 7) I 80 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Avalanche Current, L = 0.1mH I 20 A AS Avalanche Energy, L = 0.1mH E 20 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 2.2 W A D Thermal Resistance, Junction to Ambient (Note 6) R 55 C/W JA Total Power Dissipation (Note 7) T = +25C P 62.5 W C D Thermal Resistance, Junction to Case (Note 7) R 2 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. R is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. R is guaranteed by design JA JC while R is determined by the users board design. JA 7. Short duration pulse test used to minimize self-heating effect. 2 of 8 DMT6007LFGQ July 2018 Diodes Incorporated www.diodes.com Document number: DS40969 Rev. 2 - 2