1 mm Si8489EDB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a, e V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Small 1 mm x 1 mm max. outline area 0.044 at V = -10 V -5.4 GS Low 0.548 mm max. profile -20 0.054 at V = -4.5 V -4.9 9.5 nC GS 0.082 at V = -2.5 V -3.9 Typical ESD protection 2500 V HBM GS Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 MICRO FOOT 1 x 1 S 2 S S APPLICATIONS 3 Load switches and charger switches Battery management 1 For smart phones and tablet PCs G G 4 1 D Backside View Bump Side View Marking Code: xxxx = 8489 D xxx = Date / lot traceability code P-Channel MOSFET Ordering Information: Si8489EDB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -20 DS V Gate-Source Voltage V 12 GS a T = 25 C -5.4 A a T = 70 C -4.3 A Continuous Drain Current (T = 150 C) I J D b T = 25 C -3.6 A b T = 70 C -2.8 A A Pulsed Drain Current (t = 300 s) I -20 DM a T = 25 C -1.5 C Continuous Source-Drain Diode Current I S b T = 25 C -0.65 A a T = 25 C 1.8 A a T = 70 C 1.1 A Maximum Power Dissipation P W D b T = 25 C 0.78 A b T = 70 C 0.5 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg VPR 260 C c Package Reflow Conditions IR/Convection 260 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 10 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A S15-1510-Rev. B, 29-Jun-15 Document Number: 62752 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxxx xxx 1 mmSi8489EDB www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT a, b Maximum Junction-to-Ambient t = 10 s 55 70 R C/W thJA c, d Maximum Junction-to-Ambient t = 10 s 125 160 Notes a. Surface mounted on 1 x 1 FR4 board with full copper. b. Maximum under steady state conditions is 100 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper. d. Maximum under steady state conditions is 190 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -20 - - V DS GS D V Temperature Coefficient V /T --15 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -2.4 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.5 - -1.2 V GS(th) DS GS D V = 0 V, V = 4.5 V - - 1 DS GS Gate-Source Leakage I GSS V = 0 V, V = 12 V - - 5 DS GS A V = -20 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I DSS V = -20 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -10 - - A D(on) DS GS V = -10 V, I = -1.5 A - 0.036 0.044 GS D a Drain-Source On-State Resistance R V = -4.5 V, I = -1.5 A - 0.045 0.054 DS(on) GS D V = -2.5 V, I = -1 A - 0.065 0.082 GS D a Forward Transconductance g V = -10 V, I = -1.5 A - 10 - S fs DS D b Dynamic Input Capacitance C - 765 - iss Output Capacitance C V = -10 V, V = 0 V, f = 1 MHz - 125 - pF oss DS GS Reverse Transfer Capacitance C -115- rss V = -10 V, V = -10 V, I = -1.5 A - 17.5 27 DS GS D Total Gate Charge Q g -8.6 13 nC Gate-Source Charge Q V = -10 V, V = -4.5 V, I = -1.5 A -1.5 - gs DS GS D Gate-Drain Charge Q -2.6- gd Gate Resistance R V = -0.1 V, f = 1 MHz - 14 - g GS Turn-On Delay Time t -27 50 d(on) Rise Time t -20 40 r V = -10 V, R = 10 DD L I -1.5 A, V = -4.5 V, R = 1 Turn-Off Delay Time t -D GEN g50100 d(off) Fall Time t -25 50 f ns Turn-On Delay Time t -6 15 d(on) Rise Time t -8 20 r V = -10 V, R = 10 DD L I -1.5 A, V = -8 V, R = 1 Turn-Off Delay Time t -D GEN g 68130 d(off) Fall Time t -28 60 f S15-1510-Rev. B, 29-Jun-15 Document Number: 62752 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000