1 mm Si8469DB www.vishay.com Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET a, e V (V) R ()I (A) Q (TYP.) DS DS(on) D g Ultra-Small 1 mm x 1 mm maximum outline 0.064 at V = -4.5 V -4.6 GS Ultra-thin 0.548 mm maximum height 0.076 at V = -2.5 V -4.2 GS -8 6.9 nC 0.115 at V = -1.5 V -3.4 Material categorization: GS for definitions of compliance please see 0.180 at V = -1.2 V -1.2 GS www.vishay.com/doc 99912 MICRO FOOT 1 x 1 S APPLICATIONS S 2 S Load switches, battery switches and 3 charger switches in portable device applications G 1 Load switch for 1.2 V power line G 4 1 D Backside View Bump Side View Marking Code: xxxx = 8469 D xxx = Date / lot traceability code P-Channel MOSFET Ordering Information: Si8469DB-T2-E1 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMITUNIT Drain-Source Voltage V -8 DS V Gate-Source Voltage V 5 GS a T = 25 C -4.6 A a T = 70 C -3.7 A Continuous Drain Current (T = 150 C) I J D b T = 25 C -3.6 A b T = 70 C -2.8 A A Pulsed Drain Current I -15 DM a T = 25 C -1.4 A Continuous Source-Drain Diode Current I S b T = 25 C -0.6 A a T = 25 C 1.8 A a T = 70 C 1.1 A Maximum Power Dissipation P W D b T = 25 C 0.78 A b T = 70 C 0.5 A Operating Junction and Storage Temperature Range T , T -55 to +150 J stg VPR 260 C c Package Reflow Conditions IR/Convection 260 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT f, g Maximum Junction-to-Ambient t = 10 s 55 70 R C/W thJA h, i Maximum Junction-to-Ambient t = 10 s 125 160 Notes a. Surface mounted on 1 x 1 FR4 board with full copper, t = 10 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A f. Surface mounted on 1 x 1 FR4 board with full copper. g. Maximum under steady state conditions is 100 C/W. h. Surface mounted on 1 x 1 FR4 board with minimum copper. i. Maximum under steady state conditions is 190 C/W. S15-1510-Rev. B, 29-Jun-15 Document Number: 67091 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 xxxx xxx 1 mmSi8469DB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -8 - - V DS GS D V Temperature Coefficient V /T --6.4 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -2.4 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.35 - -0.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 5 V - - 100 nA GSS DS GS V = -8 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -8 V, V = 0 V, T = 70 C - - -10 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -10 - - A D(on) DS GS V = -4.5 V, I = -1.5 A - 0.052 0.064 GS D V = -2.5 V, I = -1 A - 0.062 0.076 GS D a Drain-Source On-State Resistance R DS(on) V = -1.5 V, I = -0.3 A - 0.085 0.115 GS D V = -1.2 V, I = -0.3 A - 0.110 0.180 GS D a Forward Transconductance g V = -4 V, I = -1.5 A - 12 - S fs DS D b Dynamic Input Capacitance C - 900 - iss Output Capacitance C V = -4 V, V = 0 V, f = 1 MHz - 315 - pF oss DS GS Reverse Transfer Capacitance C - 260 - rss Total Gate Charge Q -11 17 g Gate-Source Charge Q V = -4 V, V = -4.5 V, I = -1.5 A -0.85 - nC gs DS GS D Gate-Drain Charge Q -2.5 - gd Gate Resistance R V = -0.1 V, f = 1 MHz - 6 - g GS Turn-On Delay Time t -15 30 d(on) Rise Time t -22 45 r V = -4 V, R = 2.7 DD L ns I -1.5 A, V = -4.5 V, R = 1 Turn-Off Delay Time t D GEN g -35 70 d(off) Fall Time t -17 35 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - -1.5 S A A Pulse Diode Forward Current I -- -15 SM Body Diode Voltage V I = -1.5 A, V = 0 V - -0.9 -1.3 V SD S GS Body Diode Reverse Recovery Time t -25 50 ns rr Body Diode Reverse Recovery Charge Q -10 20 nC rr I = -1.5 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t -10- a ns Reverse Recovery Rise Time t -15- b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S15-1510-Rev. B, 29-Jun-15 Document Number: 67091 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000