New Product Si7994DP Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0056 at V = 10 V 60 GS COMPLIANT 30 24 nC 0.007 at V = 4.5 V APPLICATIONS 60 GS System Power DC/DC Notebook Server PowerPAK SO-8 S1 6.15 mm 5.15 mm D D 1 1 2 G1 2 S2 3 G2 4 D1 8 D1 G G 1 2 7 D2 6 D2 5 Bottom View S S 1 2 Ordering Information: Si7994DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 20 GS a T = 25 C 60 C a T = 85 C 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 20 A b, c T = 85 C A 16 A Pulsed Drain Current I 60 DM T = 25 C 38 C Continuous Source-Drain Diode Current I S b, c T = 25 C 2.9 A T = 25 C 46 C T = 85 C 29 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 85 C 2.2 A Operating Junction and Storage Temperature Range T , T J stg - 55 to 150 C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 26 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 2.2 2.7 thJC Notes: a. Package limited b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (New Product Si7994DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 30 V DS GS D V /T V Temperature Coefficient 32 DS J DS I = 250 A mV/C D V /T V Temperature Coefficient - 6.5 GS(th) J GS(th) V V = V , I = 250 A Gate-Source Threshold Voltage 13V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55 C 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 A D(on) DS GS V = 10 V, I = 20 A 0.0046 0.0056 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 17.9 A 0.0056 0.007 GS D a g V = 15 V, I = 20 A Forward Transconductance 105 S fs DS D b Dynamic Input Capacitance C 3500 iss C V = 15 V, V = 0 V, f = 1 MHz Output Capacitance 450 pF oss DS GS Reverse Transfer Capacitance C 200 rss V = 15 V, V = 10 V, I = 20 A 52 80 DS GS D Q Total Gate Charge g 24 36 nC Gate-Source Charge Q 10 V = 15 V, V = 4.5 V, I = 20 A gs DS GS D Q Gate-Drain Charge 7 gd Gate Resistance R f = 1 MHz 2.3 g t Turn-On Delay Time 35 55 d(on) t Rise Time V = 15 V, R = 1.5 15 25 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) t Fall Time 15 25 f ns t Turn-On Delay Time 15 25 d(on) t Rise Time V = 15 V, R = 1.5 10 15 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 40 60 d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 60 S C A I Pulse Diode Forward Current 60 SM Body Diode Voltage V I = 10 A, V = 0 V 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Body Diode Reverse Recovery Charge Q 27 50 nC rr I = 10 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns Reverse Recovery Rise Time t 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69974 2 S-80895-Rev. B, 21-Apr-08