1.6 mm Si8401DB www.vishay.com Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) R ()I (A) DS DS(on) D MICRO FOOT chipscale packaging reduces 0.065 at V = -4.5 V -4.9 GS -20 footprint area profile (0.62 mm) and 0.095 at V = -2.5 V -4.1 GS on-resistance per footprint area Pin compatible to industry standard MICRO FOOT 1.6 x 1.6 Si3443DV D Material categorization: for definitions of compliance 2 D please see www.vishay.com/doc 99912 3 APPLICATIONS S 1 PA, battery, and load switch G 4 1 Battery charger switch S Backside View Bump Side View PA switch G Marking: 8401 Ordering Information: Si8401DB-T1-E1 (Lead (Pb)-free and halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL 5 s STEADY STATE UNIT Drain-Source Voltage V -20 DS V Gate-Source Voltage V 12 GS T = 25 C -4.9 -3.6 A a Continuous Drain Current (T = 150 C) I J D T = 70 C -3.9 -2.8 A A Pulsed Drain Current I -10 DM a Continuous Source Current (Diode Conduction) I -2.5 -2.5 S T = 25 C 2.77 1.47 A a Maximum Power Dissipation P W D T = 70 C 1.77 0.94 A Operating Junction and Storage Temperature Range T , T -55 to 150 J stg C b IR / convection 260 Package Reflow Conditions THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT t 5 s 35 45 a Maximum Junction-to-Ambient R thJA Steady state 72 85 C/W Maximum Junction-to-Foot (drain) Steady state R 16 20 thJF Notes a. Surface mounted on 1 x 1 FR4 board. b. Refer to IPC / JEDEC (J-STD-020), no manual or hand soldering. c. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. S15-1692-Rev. J, 20-Jul-15 Document Number: 71674 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 8401 xxx 1.6 mmSi8401DB www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.UNIT Static Gate Threshold Voltage V V = V , I = -250 A -0.45 -0.9 -1.4 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V - - 100 nA GSS DS GS V = -20 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I A DSS V = -20 V, V = 0 V, T = 70 C - - -5 DS GS J a On-State Drain Current I V -5 V, V = -4.5 V -5 - - A D(on) DS GS V = -4.5 V, I = -1 A - 0.057 0.065 GS D a Drain-Source On-State Resistance R DS(on) V = -2.5 V, I = -1 A - 0.080 0.095 GS D a Forward Transconductance g V = -10 V, I = -1 A - 6 S fs DS D a Diode Forward Voltage V I = -1 A, V = 0 V - -0.73 -1.1 V SD S GS b Dynamic Total Gate Charge Q -11 17 g Gate-Source Charge Q -2V = -10 V, V = -4.5 V, I = -1 A .1- nC gs DS GS D Gate-Drain Charge Q -2.9- gd Turn-On Delay Time t -17 25 d(on) Rise Time t -28 45 r V = -10 V, R = 10 DD L I -1 A, V = -4.5 V, R = 6 Turn-Off Delay Time t -D GEN G 88135 ns d(off) Fall Time t -60 90 f Source-Drain Reverse Recovery Time t -40 60 rr I = -1 A, dI/dt = 100 A/s F Reverse Recovery Charge Q -20 30 nC rr Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 10 10 V = 5 V thru 2.5 V GS 8 8 2 V 6 6 4 4 T = 125 C C 2 2 1.5 V 25 C - 55 C 0 0 0 2468 10 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics S15-1692-Rev. J, 20-Jul-15 Document Number: 71674 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D