8465 XXX Si8465DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a, e V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition 0.104 at V = - 4.5 V - 3.8 GS TrenchFET Power MOSFET - 20 6 nC 0.148 at V = - 2.5 V - 3.2 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switches, Battery Switches and Charger Switches in Portable Device Applications DC/DC Converters MICRO FOOT Bump Side View Backside View S S G 2 1 G S D 3 4 Device Marking: 8465 xxx = Date/Lot Traceability Code D Ordering Information: Si8465DB-T2-E1 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 12 GS a T = 25 C - 3.8 A a T = 70 C - 3 A Continuous Drain Current (T = 150 C) I J D b T = 25 C - 2.5 A b T = 70 C - 2.0 A A Pulsed Drain Current I - 15 DM a T = 25 C - 1.5 C Continuous Source-Drain Diode Current I S b T = 25 C - 0.65 A a T = 25 C 1.8 A a T = 70 C 1.1 A Maximum Power Dissipation P W D b T = 25 C 0.78 A b T = 70 C 0.5 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg VPR 260 C c Package Reflow Conditions IR/Convection 260 Notes: a. Surface mounted on 1 x 1 FR4 board with full copper, t = 10 s. b. Surface mounted on 1 x 1 FR4 board with minimum copper, t = 10 s. c. Refer to IPC/JEDEC (J-STD-020C), no manual or hand soldering. d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. e. Based on T = 25 C. A Document Number: 65363 www.vishay.com S09-1922-Rev. A, 28-Sep-09 1Si8465DB Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a, b Maximum Junction-to-Ambient t = 10 s 55 70 R C/W thJA c, d Maximum Junction-to-Ambient t = 10 s 125 160 Notes: a. Surface mounted on 1 x 1 FR4 board with full copper. b. Maximum under steady state conditions is 100 C/W. c. Surface mounted on 1 x 1 FR4 board with minimum copper. d. Maximum under steady state conditions is 190 C/W. SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 12 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.8 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.6 - 1.5 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 70 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 10 A D(on) DS GS V = - 4.5 V, I = - 1.5 A 0.086 0.104 GS D a Drain-Source On-State Resistance R DS(on) V = - 2.5 V, I = - 1.5 A 0.122 0.148 GS D a Forward Transconductance g V = - 10 V, I = - 1.5 A 7 S fs DS D b Dynamic Input Capacitance C 450 iss Output Capacitance C V = - 10 V, V = 0 V, f = 1 MHz 125 pF oss DS GS Reverse Transfer Capacitance C 95 rss V = - 10 V, V = - 10 V, I = - 1 A 12 18 DS GS D Total Gate Charge Q g 69 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = 1 A 0.85 gs DS GS D Gate-Drain Charge Q 2.2 gd Gate Resistance R V = - 0.1 V, f = 1 MHz 7.5 g GS Turn-On Delay Time t 20 30 d(on) Rise Time t 20 30 V = - 10 V, R = 10 r DD L I - 1 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 2540 D GEN g d(off) Fall Time t 10 15 f ns Turn-On Delay Time t 715 d(on) Rise Time t 10 15 V = - 10 V, R = 10 r DD L I - 1 A, V = - 10 V, R = 1 Turn-Off Delay Time t 2540 D GEN g d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode I T = 25 C - 1.5 S A Current A Pulse Diode Forward Current I - 15 SM Body Diode Voltage V I = - 1 A, V = 0 V - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 20 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 1 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns Reverse Recovery Rise Time t 10 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65363 2 S09-1922-Rev. A, 28-Sep-09