X-On Electronics has gained recognition as a prominent supplier of SI7997DP-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI7997DP-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI7997DP-T1-GE3 Vishay

SI7997DP-T1-GE3 electronic component of Vishay
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Part No.SI7997DP-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Mosfet Array 2 P-Channel (Dual) 30V 60A 46W Surface Mount PowerPAK® SO-8 Dual
Datasheet: SI7997DP-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.1965 ea
Line Total: USD 2.2 
Availability - 116316
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.2155

4396
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 2.5039
10 : USD 2.1258
30 : USD 1.8866
100 : USD 1.6437
500 : USD 1.5336
1000 : USD 1.4854

116316
Ship by Thu. 14 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 2.1965
10 : USD 1.6445
100 : USD 1.242
500 : USD 1.0614
1000 : USD 1.0431
3000 : USD 1.0212

2910
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.5161

2910
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 1.1514
6000 : USD 1.1398
9000 : USD 1.1287

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SI7997DP-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI7997DP-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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New Product Si7997DP Vishay Siliconix Dual P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.0055 at V = - 10 V - 60 TrenchFET Power MOSFET GS - 30 51 nC PWM Optimized 0.0078 at V = - 4.5 V - 60 GS 100 % R Tested g PowerPAK SO-8 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC S1 APPLICATIONS 6.15 mm 5.15 mm 1 S S 1 2 G1 Battery and Load Switching 2 S2 for Notebook PCs 3 G2 4 G G 1 2 D1 8 D1 7 D2 6 D2 5 Bottom View D D 1 2 P-Channel MOSFET P-Channel MOSFET Ordering Information: Si7997DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V Gate-Source Voltage V 20 GS a T = 25 C - 60 C a T = 70 C - 60 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 20.8 A b, c T = 70 C - 16.6 A A Pulsed Drain Current I - 100 DM T = 25 C - 38 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A Single Pulse Avalanche Current I - 30 AS L = 0.1 mH Single Pulse Avalanche Energy E 45 mJ AS T = 25 C 46 C T = 70 C 29 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A T , T - 55 to 150 Operating Junction and Storage Temperature Range J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 26 35 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Case (Drain) Steady State R 2.2 2.7 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 85 C/W. Document Number: 66719 www.vishay.com S10-1826-Rev. A, 09-Aug-10 1New Product Si7997DP Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 23 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1.0 - 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 20 A On-State Drain Current D(on) DS GS V - 10 V, I = - 20 A 0.0045 0.0055 GS D a R Drain-Source On-State Resistance DS(on) V - 4.5 V, I = - 20 A 0.0063 0.0078 GS D a g V = - 15 V, I = - 20 A 71 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6200 iss Output Capacitance C V = - 15 V, V = 0 V, f = 1 MHz 615 pF oss DS GS C Reverse Transfer Capacitance 560 rss V = - 15 V, V = - 10 V, I = - 20 A 106 160 DS GS D Total Gate Charge Q g 51 77 nC Q V = - 15 V, V = - 4.5 V, I = - 20 A Gate-Source Charge 17 gs DS GS D Gate-Drain Charge Q 16.5 gd R Gate Resistance f = 1 MHz 0.9 4.6 9.2 g t Turn-On Delay Time 60 90 d(on) t Rise Time 50 75 r V = - 15 V, R = 1.5 DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 80 120 d(off) Fall Time t 40 60 f ns t Turn-On Delay Time 15 25 d(on) t Rise Time V = - 15 V, R = 1.5 10 15 r DD L I - 10 A, V = - 10 V, R = 1 Turn-Off Delay Time t D GEN g 115 175 d(off) t Fall Time 40 60 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 38 S C A a I - 100 Pulse Diode Forward Current SM Body Diode Voltage V I = - 10 A - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 35 55 ns rr Body Diode Reverse Recovery Charge Q 30 45 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns t Reverse Recovery Rise Time 20 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 66719 2 S10-1826-Rev. A, 09-Aug-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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