Si7905DN Vishay Siliconix Dual P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) Definition DS DS(on) D g TrenchFET Power MOSFET e 0.060 at V = - 10 V - 6 GS Low Thermal Resistance PowerPAK - 40 11 nC f 0.089 at V = - 4.5V Package with Small Size and Low 1.07 mm - 5 GS Profile 100 % R and UIS Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch PowerPAK 1212-8 S S 2 1 S1 3.30 mm 3.30 mm 1 G1 2 S2 G G 1 2 3 G2 4 D1 8 D1 7 D2 Bottom View 6 D2 D1 D2 5 P-Channel MOSFET P-Channel MOSFET Ordering Information: Si7905DN-T1-E3 (Lead (Pb)-free) Si7905DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 40 DS V V Gate-Source Voltage 20 GS e T = 25 C - 6 C T = 70 C - 5 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 5 A a, b T = 70 C - 4 A A I - 20 Pulsed Drain Current DM e T = 25 C - 6 C I Continuous Source-Drain Diode Current S a, b T = 25 C - 2 A I - 15 Avalanche Current AS L = 0.1 mH E Single-Pulse Avalanche Energy 11.25 mJ AS T = 25 C 20.8 C T = 70 C 13.3 C Maximum Power Dissipation P W D a, b T = 25 C 2.5 A a, b T = 70 C 1.6 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C c, d 260 Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/ppg 73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. f. T = 25 C. C Document Number: 69920 www.vishay.com S11-2187-Rev. C, 07-Nov-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si7905DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, b t 10 s R 38 50 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 4.5 6 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. b. Maximum under steady state conditions is 94 C/W. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 40 V DS GS D V Temperature Coefficient V /T - 44 DS DS J I = - 250 A mV/C D Temperature Coefficient V /T V 4.3 GS(th) J GS(th) V V = V , I = - 250 A Gate-Source Threshold Voltage - 1 - 3 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = - 40 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 40 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 10 V - 10 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 5 A 0.048 0.060 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 4 A 0.065 0.089 GS D a g V = - 15 V, I = - 5 A 25 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 880 iss C V = - 20 V, V = 0 V, f = 1 MHz Output Capacitance 100 pF oss DS GS C Reverse Transfer Capacitance 80 rss V = - 20 V, V = - 10 V, I = - 5 A 20 30 DS GS D Q Total Gate Charge g 11 16.5 nC Q V = - 20 V, V = - 4.5 V, I = - 5 A Gate-Source Charge 3 gs DS GS D Q Gate-Drain Charge 5 gd R Gate Resistance f = 1 MHz 5.7 8.6 g t Turn-On Delay Time 42 65 d(on) t Rise Time V = - 20 V, R = 5 100 150 r DD L t I - 4 A, V = - 4.5 V, R = 1 Turn-Off DelayTime 24 40 d(off) D GEN g t Fall Time 11 17 f ns t Turn-On Delay Time 610 d(on) t Rise Time V = - 20 V, R = 5 13 20 r DD L t I - 4 A, V = - 10 V, R = 1 Turn-Off DelayTime 26 40 d(off) D GEN g t Fall Time 10 16 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 6 S C A a I - 20 Pulse Diode Forward Current SM V I = - 4 A Body Diode Voltage - 0.8 - 1.2 V SD F t Body Diode Reverse Recovery Time 20 30 ns rr Q Body Diode Reverse Recovery Charge 15 23 nC rr I = - 4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 14 a ns t Reverse Recovery Rise Time 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 69920 2 S11-2187-Rev. C, 07-Nov-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000