Si7866ADP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.0024 at V = 10 V 40 GS Low R COMPLIANT DS(on) 20 39 nC 0.0030 at V = 4.5 V 40 GS PWM (Q and R ) Optimized gd g 100 % R Tested g PowerPAK SO-8 APPLICATIONS Low-Side MOSFET in Synchronous Buck DC/DC Converters in Desktops S 6.15 mm 5.15 mm 1 S Low Output Voltage Synchronous Rectifier 2 S D 3 G 4 D 8 D 7 D G 6 D 5 Bottom View S Ordering Information: Si7866ADP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7866ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 20 DS V V Gate-Source Voltage 20 GS T = 25 C 40 C T = 70 C 32 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 35 b, c T = 70 C A 28 A I Pulsed Drain Current 70 DM T = 25 C 40 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 4.9 I Single Pulse Avalanche Current 25 AS L = 0.1 mH E 31 mJ Avalanche Energy AS T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.4 b, c T = 70 C A 3.4 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 10 s 18 23 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (Si7866ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 23 DS DS J I = 5 mA mV/C D V Temperature Coefficient V /T 5 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.8 2.2 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0019 0.0024 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0023 0.0030 GS D a g V = 15 V, I = 20 A 110 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 5415 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 1285 pF oss DS GS C Reverse Transfer Capacitance 535 rss V = 10 V, V = 10 V, I = 15 A 83 125 DS GS D Q Total Gate Charge g 39 60 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 15 A 12.5 gs DS GS D Q Gate-Drain Charge 10.3 gd R Gate Resistance f = 1 MHz 0.5 1.1 1.7 g t Turn-On Delay Time 34 50 d(on) t Rise Time V = 10 V, R = 1 120 180 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 42 65 d(off) Fall Time t 12 20 f ns t Turn-On Delay Time 18 30 d(on) Rise Time t 105 160 V = 10 V, R = 1 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 49 75 d(off) Fall Time t 915 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 40 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.72 1.1 V SD S t Body Diode Reverse Recovery Time 51 75 ns rr Body Diode Reverse Recovery Charge Q 41 60 nC rr I = 20 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 23 a ns Reverse Recovery Rise Time t 28 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73380 2 S-80440-Rev. C, 03-Mar-08