Si7892BDP Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET RoHS 0.0042 at V = 10 V 25 GS New Low Thermal Resistance PowerPAK COMPLIANT 30 27 0.0057 at V = 4.5 V 22 Package with Low 1.07 mm Profile GS Low Gate Charge 100 % R Tested g PowerP AK SO-8 APPLICATIONS Synchronous Rectifier S 6.15 mm 5.15 mm 1 S 2 S 3 D G 4 D 8 D 7 D 6 G D 5 Bottom View S Ordering Information: Si7892BDP-T1-E3 (Lead (Pb)-free) Si7892BDP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit V Drain-Source Voltage 30 DS V Gate-Source Voltage V 20 GS T = 25 C 25 15 A a I Continuous Drain Current (T = 150C) D J T = 70 C 20 12 A Pulsed Drain Current (10 s Pulse Width) I 60 A DM a I 4.1 1.5 Continuous Source Current (Diode Conduction) S I Avalanche Current 40 AS L = 0.1 mH Single Pulse Avalanche Energy E 80 mJ AS T = 25 C 51.8 A a P W Maximum Power Dissipation D T = 70 C 3.2 1.1 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b, c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 20 25 a R Maximum Junction-to-Ambient thJA Steady State 53 70 C/W R Maximum Junction-to-Case (Drain) Steady State 2.1 3.2 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (Si7892BDP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 1.0 3.0 V GS(th) DS GS D V Temperature Coefficient V 28 DS DS/Tj I = 250 A mV/C D V Temperature Coefficient V - 6.5 GS(th) GS(th)/Tj Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 55C 5 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 25 A 0.0034 0.0042 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 22 A 0.0047 0.0057 GS D a g V = 15 V, I = 25 A 85 S fs DS D Forward Transconductance a V I = 4.5 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic C Input Capacitance 3775 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 Hz 630 pF oss DS SS Reverse Transfer Capacitance C 295 rss Total Gate Charge Q 27 40 g V = 15 V, V = 4.5 V, I = 25 A Gate-Source Charge Q 11.4 nC DS GS D gs Gate-Drain Charge Q 8.1 gd Gate Resistance R 0.5 1.2 2.0 g t Turn-On Delay Time 20 30 d(on) t V = 15 V, R = 15 Rise Time 13 20 r DD L t I 1 A, V = 10 V, R = 6 Turn-Off Delay Time 62 100 ns d(off) D GEN G t Fall Time 20 35 f Source-Drain Reverse Recovery t 40 60 rr I = 2.9 A, di/dt = 100 A/s F Reverse Recovery Charge Q 40 60 nC rr Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 thru 4 V GS 40 40 30 30 T = 125 C C 20 20 25 C 10 10 3 V - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.2 0.4 0.6 0.8 1.0 V - Gate-to-Source Voltage (V) V - Drain-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73228 2 S-80440-Rev. C, 03-Mar-08 I - Drain Current (A) D I - Drain Current (A) D