DMPH6050SFGQ 60V P-CHANNEL +175C MOSFET PowerDI3333-8 Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 50m V = -10V -18A GS -60V and Robust End Application 70m V = -4.5V -15A GS Low R ensures on state losses are minimized DS(ON) Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET is designed to meet the stringent requirements of Halogen and Antimony Free. Green Device (Note 3) automotive applications. It is qualified to AEC-Q101, supported by a Qualified to AEC-Q101 Standards for High Reliability PPAP and is ideal for use in: PPAP Capable (Note 4) Backlighting Mechanical Data Power Management Functions DC-DC Converters Case: PowerDI 3333-8 Case Material: Molded Plastic,Gree Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D S D Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMPH6050SFGQ-7 2,000/Tape & Reel PowerDI3333-8 DMPH6050SFGQ-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMPH6050SFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady TA = +25C -6.1 A Continuous Drain Current (Note 7) V = -10V I GS D State -4.2 T = +100C A Steady T = +25C -18 C Continuous Drain Current (Note 8) V = -10V I A GS D State -12 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -32 A DM Maximum Continuous Body Diode Forward Current (Note 7) I -2 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) -32 A I SM Avalanche Current (Note 9) L = 0.1mH -24.8 A I AS Avalanche Energy (Note 9) L = 0.1mH 30.8 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1.2 W D Steady state 125 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 85 Total Power Dissipation (Note 7) 2.8 W P D Steady state 54 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 37 C/W Thermal Resistance, Junction to Case (Note 8) 6 R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(TH) DS GS D 41 50 V = -10V, I = -7A GS D Static Drain-Source On-Resistance m R DS(ON) 52 70 V = -4.5V, I = -7A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance C 1293 pF iss V = -30V, V = 0V, DS GS Output Capacitance C pF oss 86.3 f = 1MHz Reverse Transfer Capacitance pF C 64.7 rss Gate Resistance 12 R V = 0V, V = 0V, f = 1MHz g DS GS 11.9 nC Total Gate Charge (V = -4.5V) Q GS g 24.1 nC Total Gate Charge (V = -10V) Q GS g V = -30V, I = -5A DS D 3.6 Gate-Source Charge Q nC gs 5.7 Gate-Drain Charge Q nC gd 4.3 Turn-On Delay Time t ns D(ON) 6.3 Turn-On Rise Time t ns R V = -30V, V = -10V, DS GS 46.7 Turn-Off Delay Time t ns R = 3, I = -5A D(OFF) G D 25.3 Turn-Off Fall Time t ns F Body Diode Reverse Recovery Time 13.6 ns t RR I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 7.4 nC Q RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH6050SFGQ March 2017 Diodes Incorporated www.diodes.com Document number: DS39560 Rev. 1 - 2 ADVANCE INFORMATION ADVANCED INFORMATION