X-On Electronics has gained recognition as a prominent supplier of DMPH6050SFGQ-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMPH6050SFGQ-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMPH6050SFGQ-7 Diodes Incorporated

DMPH6050SFGQ-7 electronic component of Diodes Incorporated
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See Product Specifications
Part No.DMPH6050SFGQ-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET MOSFET BVDSS: 41V-60V
Datasheet: DMPH6050SFGQ-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5953 ea
Line Total: USD 0.6 
Availability - 1966
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1032
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.0963
10 : USD 0.8997
25 : USD 0.8826
100 : USD 0.6623
250 : USD 0.6557
500 : USD 0.5332
1000 : USD 0.4421

1966
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5953
10 : USD 0.4956
30 : USD 0.4521
100 : USD 0.3995
500 : USD 0.3768
1000 : USD 0.3618

6578
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.1
10 : USD 0.7865
100 : USD 0.5621
500 : USD 0.4532
1000 : USD 0.3971
2000 : USD 0.385
4000 : USD 0.3641

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Hts Code
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We are delighted to provide the DMPH6050SFGQ-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMPH6050SFGQ-7 and other electronic components in the MOSFETs category and beyond.

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DMPH6050SFGQ 60V P-CHANNEL +175C MOSFET PowerDI3333-8 Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 50m V = -10V -18A GS -60V and Robust End Application 70m V = -4.5V -15A GS Low R ensures on state losses are minimized DS(ON) Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET is designed to meet the stringent requirements of Halogen and Antimony Free. Green Device (Note 3) automotive applications. It is qualified to AEC-Q101, supported by a Qualified to AEC-Q101 Standards for High Reliability PPAP and is ideal for use in: PPAP Capable (Note 4) Backlighting Mechanical Data Power Management Functions DC-DC Converters Case: PowerDI 3333-8 Case Material: Molded Plastic,Gree Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 D Pin 1 S S S G G D D D S D Bottom View Top View Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMPH6050SFGQ-7 2,000/Tape & Reel PowerDI3333-8 DMPH6050SFGQ-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMPH6050SFGQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -60 V DSS Gate-Source Voltage V 20 V GSS Steady TA = +25C -6.1 A Continuous Drain Current (Note 7) V = -10V I GS D State -4.2 T = +100C A Steady T = +25C -18 C Continuous Drain Current (Note 8) V = -10V I A GS D State -12 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I -32 A DM Maximum Continuous Body Diode Forward Current (Note 7) I -2 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) -32 A I SM Avalanche Current (Note 9) L = 0.1mH -24.8 A I AS Avalanche Energy (Note 9) L = 0.1mH 30.8 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) P 1.2 W D Steady state 125 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA t<10s 85 Total Power Dissipation (Note 7) 2.8 W P D Steady state 54 Thermal Resistance, Junction to Ambient (Note 7) R JA t<10s 37 C/W Thermal Resistance, Junction to Case (Note 8) 6 R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 10) Drain-Source Breakdown Voltage -60 V BV V = 0V, I = -250A DSS GS D -1 A Zero Gate Voltage Drain Current T = +25C I V = -60V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 10) Gate Threshold Voltage V -1 -3 V V = V , I = -250A GS(TH) DS GS D 41 50 V = -10V, I = -7A GS D Static Drain-Source On-Resistance m R DS(ON) 52 70 V = -4.5V, I = -7A GS D Diode Forward Voltage V -0.7 -1.2 V V = 0V, I = -1A SD GS S DYNAMIC CHARACTERISTICS (Note 11) Input Capacitance C 1293 pF iss V = -30V, V = 0V, DS GS Output Capacitance C pF oss 86.3 f = 1MHz Reverse Transfer Capacitance pF C 64.7 rss Gate Resistance 12 R V = 0V, V = 0V, f = 1MHz g DS GS 11.9 nC Total Gate Charge (V = -4.5V) Q GS g 24.1 nC Total Gate Charge (V = -10V) Q GS g V = -30V, I = -5A DS D 3.6 Gate-Source Charge Q nC gs 5.7 Gate-Drain Charge Q nC gd 4.3 Turn-On Delay Time t ns D(ON) 6.3 Turn-On Rise Time t ns R V = -30V, V = -10V, DS GS 46.7 Turn-Off Delay Time t ns R = 3, I = -5A D(OFF) G D 25.3 Turn-Off Fall Time t ns F Body Diode Reverse Recovery Time 13.6 ns t RR I = -5A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 7.4 nC Q RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Thermal resistance from junction to soldering point (on the exposed drain pad). 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 10. Short duration pulse test used to minimize self-heating effect. 11. Guaranteed by design. Not subject to product testing. 2 of 7 DMPH6050SFGQ March 2017 Diodes Incorporated www.diodes.com Document number: DS39560 Rev. 1 - 2 ADVANCE INFORMATION ADVANCED INFORMATION

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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