DMN61D9UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Dual N-Channel MOSFET I max Low On-Resistance D V R max (BR)DSS DS(ON) T = +25C Low Gate Threshold Voltage A 2 V = 5.0V Low Input Capacitance GS 60V 350mA 2.5 V = 2.5V Fast Switching Speed GS Low Input/Output Leakage Ultra-Small Surface Mount Package Description ESD Protected Up To 2kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET is designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it DS(ON) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Case: SOT363 Case Material: Molded Plastic. Green Molding Compound. Motor Control UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 D1 D2 D G S 2 1 1 G2 G1 ESD Protected up to 2kV Gate Protection Gate Protection S1 S2 Diode Diode S G D 2 2 1 Q2 N-Channel Q1 N-Channel Top View Top View Equivalent Circuit Pin out Ordering Information (Note 4) Part Number Case Packaging DMN61D9UDW-7 SOT363 3000/Tape & Reel DMN61D9UDW-13 SOT363 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN61D9UDW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 350 A mA Continuous Drain Current (Note 6) V = 5V I GS D State 290 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 0.4 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) I 1.2 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 320 mW P D Thermal Resistance, Junction to Ambient (Note 5) Steady State 397 C/W R JA Total Power Dissipation (Note 6) 410 mW P D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 306 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 60V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.0 V V = 10V, I = 250A GS(TH) DS D V = 5.0V, I = 0.05A GS D 1.2 2.0 Static Drain-Source On-Resistance R 1.6 2.5 V = 2.5V, I = 0.05A DS(ON) GS D 2.5 3.5 VGS = 1.8V, ID = 0.05A Forward Transconductance 200 mS Y V =10V, I = 0.2A fs DS D Diode Forward Voltage 0.75 1.4 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 28.5 pF C iss V = 30V, V = 0V DS GS Output Capacitance 3.9 pF C oss f = 1.0MHz Reverse Transfer Capacitance 2.5 pF C rss Gate Resistance R 65 f = 1MHz , V = 0V, V = 0V g GS DS Total Gate Charge Q 0.4 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.1 nC gs I = 250mA D Gate-Drain Charge Q 0.1 nC gd Turn-On Delay Time 2.1 ns tD(ON) Turn-On Rise Time 1.8 ns t V = 30V, V = 10V, R DD GS Turn-Off Delay Time 14.4 ns R = 25, I = 200mA t G D D(OFF) Turn-Off Fall Time 8.4 ns t F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN61D9UDW November 2015 Diodes Incorporated www.diodes.com Document number: DS38032 Rev. 2 - 2 NEW PRODUCT NEW PRODUCT