Si7898DP Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Available 0.085 at V = 10 V 4.8 GS TrenchFET Power MOSFETs 150 for Fast Switching 0.095 at V = 6.0 V 4.5 GS New Low Thermal Resistance PowerPAK Package with Low 1.07 mm Profile PWM Optimized PowerP AK SO-8 100 % R Tested g APPLICATIONS S 6.15 mm 5.15 mm DC/DC Power Supply Primary Side Switch 1 S 2 S Industrial Motor Drives 3 G D 4 D 8 D 7 D 6 D G 5 Bottom V iew S Ordering Information: Si7898DP-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si7898DP-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 150 DS V V Gate-Source Voltage 20 GS T = 25 C 4.8 3.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 3.8 2.4 A I Pulsed Drain Current 25 A DM Avalanche Current L = 0.1 mH I 10 AS a I 4.1 1.6 Continuous Source Current (Diode Conduction) S T = 25 C 5.0 1.9 A a P W Maximum Power Dissipation D T = 70 C 3.2 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C b,c 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 20 25 a R Maximum Junction-to-Ambient thJA Steady State 52 65 C/W Maximum Junction-to-Case (Drain) Steady State R 2.1 2.6 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. b. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 71873 www.vishay.com S09-0227-Rev. D, 09-Feb-09 1Si7898DP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Condition Min. Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2.0 4.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 150 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 150 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 25 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.5 A 0.068 0.085 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 3.0 A 0.076 0.095 GS D a g V = 15 V, I = 5 A 15 S Forward Transconductance fs DS D a V I = 2.5 A, V = 0 V 0.75 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 17 21 g Q V = 75 V, V = 10 V, I = 3.5 A Gate-Source Charge 3.2 nC gs DS GS D Gate-Drain Charge Q 6.0 gd R Gate Resistance 0.50.852.5 g Turn-On Delay Time t 9.0 14 d(on) t Rise Time V = 75 V, R = 21 10 15 r DD L I 3.5 A, V = 10 V, R = 6 Turn-Off Delay Time t 24 35 D GEN g d(off) ns t Fall Time 17 25 f Source-Drain Reverse Recovery t I = 2.5 A, dI/dt = 100 A/s 45 70 rr F Time Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 25 V = 10 V thru 6 V GS 20 20 15 15 5 V 10 10 T = 125 C C 5 5 25 C 3, 4 V - 55 C 0 0 02468 10 0123456 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71873 2 S09-0227-Rev. D, 09-Feb-09 I - Drain Current (A) D I - Drain Current (A) D