Si7868ADP Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free available a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.00225 at V = 10 V 40 GS COMPLIANT Low R 20 46 nC DS(on) 0.00275 at V = 4.5 V 40 GS PWM (Q and R ) Optimized gd g 100 % R Tested PowerPAK SO-8 g APPLICATIONS Low Output Voltage Synchronous Rectifier S 6.15 mm 5.15 mm 1 D S 2 S 3 G 4 D 8 D G 7 D 6 D 5 Bottom View S Ordering Information: Si7868ADP-T1-E3 (Lead (Pb)-free) Si7868ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 20 DS V Gate-Source Voltage V 16 GS T = 25 C 40 C T = 70 C 32 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 35 b, c T = 70 C A 28 A Pulsed Drain Current I 70 DM T = 25 C 40 C I Continuous Source-Drain Diode Current S b, c T = 25 C A 4.9 Single-Pulse Avalanche Current I 30 AS L = 0.1 mH E Single-Pulse Avalanche Energy 45 mJ AS T = 25 C 83 C T = 70 C 53 C P Maximum Power Dissipation W D b, c T = 25 C A 5.4 b, c T = 70 C A 3.4 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 10 s R 18 23 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 1.0 1.5 thJC Notes: a. Based on T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 10 s. d. See Solder Profile (Si7868ADP Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 20 V DS GS D V Temperature Coefficient V /T 23 DS DS J I = 5 mA mV/C D V Temperature Coefficient V /T 4 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.6 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Source Leakage 100 nA GSS DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 10 V 30 A On-State Drain Current D(on) DS GS V = 10 V, I = 20 A 0.0018 0.00225 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 20 A 0.0021 0.00275 GS D a g V = 15 V, I = 20 A 150 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 6110 iss Output Capacitance C V = 10 V, V = 0 V, f = 1 MHz 1225 pF oss DS GS C Reverse Transfer Capacitance 550 rss V = 10 V, V = 10 V, I = 15 A 98 150 DS GS D Q Total Gate Charge g 46 70 nC Q Gate-Source Charge V = 10 V, V = 4.5 V, I = 15 A 9.5 gs DS GS D Q Gate-Drain Charge 8.8 gd R Gate Resistance f = 1 MHz 0.5 1.1 1.7 g t Turn-On Delay Time 28 45 d(on) t Rise Time V = 10 V, R = 1 120 180 r DD L I 10 A, V = 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 52 80 d(off) Fall Time t 12 20 f ns t Turn-On Delay Time 16 25 d(on) Rise Time t 97 150 V = 10 V, R = 1 r DD L I 10 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 58 90 d(off) Fall Time t 815 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 40 S C A a I 70 Pulse Diode Forward Current SM Body Diode Voltage V I = 5 A 0.65 1.1 V SD S t Body Diode Reverse Recovery Time 50 75 ns rr Body Diode Reverse Recovery Charge Q 43 60 nC rr I = 20 A, di/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 24 a ns Reverse Recovery Rise Time t 26 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73384 2 S-80438-Rev. B, 03-Mar-08