Si7900AEDN Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET, Common Drain FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D TrenchFET Power MOSFET: 1.8 V Rated 0.026 at V = 4.5 V 8.5 GS New PowerPak Package RoHS 20 0.030 at V = 2.5 V 8 GS COMPLIANT - Low Thermal Resistance, R thJC 0.036 at V = 1.8 V 7 GS - Low 1.07 mm Profile 3000 V ESD Protection APPLICATIONS Protection Switch for 1-2 Li-ion Batteries PowerPAK 1212-8 D D 1 2 S1 3.30 mm 3.30 mm 1 G1 2 S2 3 2.6 k 2.6 k G2 4 G G 1 2 D 8 D 7 D 6 D 5 Bottom View S S 1 2 Ordering Information: Si7900AEDN-T1-E3 (Lead (Pb)-free) N-Channel N-Channel Si7900AEDN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V 20 DS V V Gate-Source Voltage 12 GS T = 25 C 8.5 6 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 6.4 4.3 A A I Pulsed Drain Current 30 DM a I 2.9 1.4 Continuous Source Current (Diode Conduction) S T = 25 C 3.1 1.5 A a P W Maximum Power Dissipation D T = 85 C 1.6 0.79 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 32 40 a R Maximum Junction-to-Ambient thJA Steady State 65 82 C/W R Maximum Junction-to-Case Steady State 2.2 2.8 thJC Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 72287 www.vishay.com S-81544-Rev. C, 07-Jul-08 1Si7900AEDN Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.40 0.9 V GS(th) DS GS D V = 0 V, V = 4.5 V 1 A DS GS Gate-Body Leakage I GSS V = 0 V, V = 12 V 10 mA DS GS V = 20 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 20 V, V = 0 V, T = 85 C 20 DS GS J a I V = 5 V, V = 4.5 V 20 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 8.5 A 0.020 0.026 GS D a R V = 2.5 V, I = 8 A 0.022 0.030 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 7 A 0.026 0.036 GS D a g V = 10 V, I = 8.5 A 25 S Forward Transconductance fs DS D a V I = 2.9 A, V = 0 V 0.65 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 10.5 16 g Q V = 10 V, V = 4.5 V, I = 6.5 A Gate-Source Charge 1.9 nC gs DS GS D Gate-Drain Charge Q 1.8 gd t Turn-On Delay Time 0.85 1.25 d(on) Rise Time t 1.3 2.0 V = 10 V, R = 10 r DD L ns I 1 A, V = 4.5 V, R = 6 t Turn-Off Delay Time D GEN G 8.6 13 d(off) Fall Time t 4.2 6.5 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10 000 1000 8 100 6 T = 150 C J 10 4 1 T = 25 C 2 J 0.1 0 0.01 0369 12 15 0 3 6 9 12 15 18 V - Gate-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS GS Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage www.vishay.com Document Number: 72287 2 S-81544-Rev. C, 07-Jul-08 I - Gate Current (mA) GSS I - Gate Current (A) GSS