SiB457EDK Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.035 at V = - 4.5 V GS - 9 TrenchFET Power MOSFET a New Thermally Enhanced PowerPAK 0.049 at V = - 2.5 V - 9 GS - 20 13 nC SC-75 Package a 0.079 at V = - 1.8 V - 9 GS - Small Footprint Area 0.157 at V = - 1.5 V - 2 GS - Low On-Resistance 100 % R Tested g Typical ESD Performance: 2500 V PowerPAK SC-75-6L-Single Built in ESD Protection with Zener Diode Compliant to RoHS Directive 2011/65/EU 1 D APPLICATIONS 2 D Load Switch for Portable Devices 3 Load Switch for Charging Circuits G D 6 S D S Marking Code 5 1.60 mm S 1.60 mm B J X 4 Part code X X X G Lot Traceability R Ordering Information: and Date code SiB457EDK-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8 GS a T = 25 C - 9 C a - 9 T = 70 C C Continuous Drain Current (T = 150 C) I J D b, c - 6.8 T = 25 C A b, c T = 70 C - 5.5 A A Pulsed Drain Current I - 25 DM a - 9 T = 25 C C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2 A T = 25 C 13 C T = 70 C 8.4 C Maximum Power Dissipation P W D b, c T = 25 C 2.4 A b, c 1.6 T = 70 C A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s thJA 41 51 Maximum Junction-to-Ambient C/W Maximum Junction-to-Case (Drain) Steady State R 7.5 9.5 thJC Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 105 C/W. Document Number: 64816 For more information please contact: pmostechsupport vishay.com www.vishay.com S12-0497-Rev. C, 05-Mar-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiB457EDK Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 V DS GS D V Temperature Coefficient V /T - 12 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.5 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 8 V 5 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 0.5 DS GS A V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 15 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4.8 A 0.029 0.035 GS D V = - 2.5 V, I = - 4 A 0.040 0.049 GS D a R Drain-Source On-State Resistance DS(on) V = - 1.8 V, I = - 3.3 A 0.060 0.079 GS D V = - 1.5 V, I = - 1.5 A 0.085 0.157 GS D a g V = - 10 V, I = - 4.8 A 16 S Forward Transconductance fs DS D b Dynamic V = - 10 V, V = - 8 V, I = - 6.8 A Total Gate Charge 22 44 DS GS D Q g 13 26 Gate-Source Charge nC Q V = - 10 V, V = - 4.5 V, I = - 6.8 A 1.2 gs DS GS D Q Gate-Drain Charge 3 gd R Gate Resistance f = 1 MHz 0.28 1.4 2.8 k g t Turn-On Delay Time 0.34 0.51 d(on) t Rise Time V = - 10 V, R = 1.8 0.90 1.35 r DD L I - 5.5 A, V = - 4.5 V, R = 1 t Turn-Off Delay Time D GEN g 34.5 d(off) Fall Time t 1.90 2.90 f s t Turn-On Delay Time 0.17 0.26 d(on) Rise Time t 0.45 0.70 V = - 10 V, R = 1.8 r DD L I - 5.5 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 5.5 8.30 d(off) Fall Time t 23.5 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current - 9 S C A I Pulse Diode Forward Current - 25 SM V I = - 5.5 A, V = 0 V Body Diode Voltage - 0.85 - 1.2 V SD S GS Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For more information please contact: pmostechsupport vishay.com Document Number: 64816 2 S12-0497-Rev. C, 05-Mar-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000