X-On Electronics has gained recognition as a prominent supplier of SIHB12N50C-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHB12N50C-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHB12N50C-E3 Vishay

SIHB12N50C-E3 electronic component of Vishay
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Part No.SIHB12N50C-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET N-Channel 500V
Datasheet: SIHB12N50C-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1000: USD 2.829 ea
Line Total: USD 2829 
Availability - 0
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1000
Multiples : 1000
1000 : USD 2.829
2000 : USD 2.829

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SIHB12N50C-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHB12N50C-E3 and other electronic components in the MOSFETs category and beyond.

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SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit R x Q on g V (V) at T max. 560 V DS J R ()V = 10 V 0.555 DS(on) GS 100 % Avalanche Tested Q (Max.) (nC) 48 g Gate Charge Improved Q (nC) 12 gs T /Q Improved rr rr Q (nC) 15 gd Configuration Single Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK D S D S D G G G 2 D PAK (TO-263) S D G N-Channel MOSFET S ORDERING INFORMATION 2 Package TO-220AB D PAK (TO-263) TO-220 FULLPAK Lead (Pb)-free SiHP12N50C-E3 SiHB12N50C-E3 SiHF12N50C-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C LIMIT TO220-AB TO-220 2 PARAMETER SYMBOL D PAK (TO-263) FULLPAK UNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 12 C a Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 7.5 A C c Pulsed Drain Current I 28 DM Linear Derating Factor 1.67 0.28 W/C b Single Pulse Avalanche Energy E 180 mJ AS Maximum Power Dissipation P 208 36 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.5 mH, R = 25 , I = 12 A. DD J g AS c. Repetitive rating pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91388 www.vishay.com S10-0969-Rev. B, 26-Apr-10 1SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix THERMAL RESISTANCE RATINGS 2 PARAMETER SYMBOLTO220-AB D PAK (TO-263) TO-220 FULLPAK UNIT Maximum Junction-to-Ambient R 62 65 thJA Maximum Junction-to-Case (Drain) R 0.6 3.5 C/W thJC a Junction-to-Ambient (PCB mount) R 40 - thJA Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.6 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J Drain-Source On-State Resistance R V = 10 V I = 4 A - 0.46 0.555 DS(on) GS D Forward Transconductance g V = 50 V, I = 3 A - 3 - S fs DS D Dynamic Input Capacitance C - 1375 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 165- pF oss DS f = 1.0 MHz Reverse Transfer Capacitance C -17- rss Total Gate Charge Q -32 48 g Gate-Source Charge Q -1V = 10 V I = 10 A, V = 400 V2- nC gs GS D DS Gate-Drain Charge Q -15- gd Turn-On Delay Time t -18 - d(on) Rise Time t -35 - r V = 250 V, I = 10 A DD D ns R = 4.3 , V = 10 V g GS Turn-Off Delay Time t -23- d(off) Fall Time t -6- f Gate Input Resistance R f = 1 MHz, open drain - 1.1 - g Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 12 S showing the A G integral reverse Pulsed Diode Forward Current I -- 28 SM S p - n junction diode Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V - - 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 580 - ns rr T = 25 C, I = I , dI/dt = 100 A/s, J F S Body Diode Reverse Recovery Charge Q -4.3 - C rr V = 20 V R Body Diode Reverse Recovery Current I -13 - A RRM Note The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. www.vishay.com Document Number: 91388 2 S10-0969-Rev. B, 26-Apr-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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