X-On Electronics has gained recognition as a prominent supplier of SIHB20N50E-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHB20N50E-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHB20N50E-GE3 Vishay

SIHB20N50E-GE3 electronic component of Vishay
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Part No.SIHB20N50E-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET N-Channel 500V
Datasheet: SIHB20N50E-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.231 ea
Line Total: USD 2.23 
Availability - 880
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
880
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 2.231
10 : USD 1.9665
25 : USD 1.9435
100 : USD 1.702
1000 : USD 1.6905
5000 : USD 1.6445

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Cnhts
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Mxhts
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We are delighted to provide the SIHB20N50E-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHB20N50E-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHB20N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) R x Q on g V (V) at T max. 550 DS J Low input capacitance (C ) iss R max. at 25 C ()V = 10 V 0.184 DS(on) GS Reduced switching and conduction losses Q max. (nC) 92 g Low gate charge (Q ) g Q (nC) 10 gs Avalanche energy rated (UIS) Q (nC) 19 gd Material categorization: for definitions of compliance Configuration Single please see www.vishay.com/doc 99912 APPLICATIONS D Computing 2 D PAK (TO-263) - PC silver box / ATX power supplies Lighting - Two stage LED lighting G Consumer electronics Applications using hard switched topologies D G - Power factor correction (PFC) S S - Two switch forward converter N-Channel MOSFET - Flyback converter Switch mode power supplies (SMPS) ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free and Halogen-free SiHB20N50E-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 19 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 12 A C a Pulsed Drain Current I 42 DM Linear Derating Factor 1.4 W/C b Single Pulse Avalanche Energy E 204 mJ AS Maximum Power Dissipation P 179 W D Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg Drain-Source Voltage Slope V = 0 V to 80 % V 70 DS DS dV/dt V/ns d Reverse Diode dV/dt 32 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 3.8 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) R -0.7 thJC S15-0278-Rev. B, 23-Feb-15 Document Number: 91634 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000SiHB20N50E www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.59 - V/C DS J DS D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-Source Leakage I GSS V = 30 V - - 1 A GS V = 500 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 10 A - 0.160 0.184 DS(on) GS D Forward Transconductance g V = 30 V, I = 10 A - 4.4 - S fs DS D Dynamic Input Capacitance C - 1640 - iss V = 0 V, GS Output Capacitance C -8V = 100 V, 7- oss DS f = 1 MHz Reverse Transfer Capacitance C -6- rss pF Effective Output Capacitance, Energy C -73 - o(er) a Related V = 0 V to 400 V, V = 0 V DS GS Effective Output Capacitance, Time C - 222 - b o(tr) Related Total Gate Charge Q -46 92 g Gate-Source Charge Q -1V = 10 V I = 10 A, V = 400 V0- nC gs GS D DS Gate-Drain Charge Q -19- gd Turn-On Delay Time t -17 34 d(on) Rise Time t -27 54 r V = 400 V, I = 10 A, DD D ns Turn-Off Delay Time t -4V = 10 V, R = 9.1 896 d(off) GS g Fall Time t -2550 f Gate Input Resistance R f = 1 MHz, open drain - 0.83 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 19 S showing the A G integral reverse Pulsed Diode Forward Current I -- 42 SM S p - n junction diode Diode Forward Voltage V T = 25 C, I = 10 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 293 - ns rr T = 25 C, I = I = 10 A, J F S Reverse Recovery Charge Q -4.0 - C rr dI/dt = 100 A/s, V = 25 V R Reverse Recovery Current I -26 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V . oss(er) oss DS DSS b. C is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss(tr) oss DS DSS S15-0278-Rev. B, 23-Feb-15 Document Number: 91634 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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