SiHG16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Figure-of-Merit R x Q on g V (V) at T max. 560 V DS J R ()V = 10 V 0.38 DS(on) GS 100 % Avalanche Tested Q (Max.) (nC) 68 g Gate Charge Improved Q (nC) 17.6 gs T /Q Improved rr rr Q (nC) 21.8 gd Configuration Single Compliant to RoHS Directive 2002/95/EC D TO-247AC G S D G S N-Channel MOSFET ORDERING INFORMATION Package TO-247AC Lead (Pb)-free SiHG16N50C-E3 ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 16 C a Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 10 A C c Pulsed Drain Current I 40 DM Linear Derating Factor 2W/C b Single Pulse Avalanche Energy E 320 mJ AS Maximum Power Dissipation P 250 W D - 55 to + 150 Operating Junction and Storage Temperature Range T , T J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 2.5 mH, R = 25 , I = 16 A. DD J g AS c. Repetitive rating pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91418 www.vishay.com S10-1355-Rev. A, 14-Jun-10 1SiHG16N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -0.5 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.6 - V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 3.0 - 5.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 50 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J Drain-Source On-State Resistance R V = 10 V I = 8 A - 0.317 0.38 DS(on) GS D a Forward Transconductance g V = 50 V, I = 3 A - 3 - S fs DS D Dynamic Input Capacitance C - 1900 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 230- pF oss DS f = 1.0 MHz Reverse Transfer Capacitance C -24- rss Total Gate Charge Q -45 68 g V = 10 V I = 16 A, V = 400 V nC GS D DS Gate-Source Charge Q -18- gs Gate-Drain Charge Q -22- gd Turn-On Delay Time t -27 - d(on) Rise Time t - 156 - r V = 250 V, I = 16 A, DD D ns R = 9.1 , V = 10 V Turn-Off Delay Time t -2g GS 9- d(off) Fall Time t -31- f Gate Input Resistance R f = 1 MHz, open drain - 1.6 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 16 S showing the A G integral reverse Pulsed Diode Forward Current I -- 30 SM p - n junction diode S Body Diode Voltage V T = 25 C, I = 10 A, V = 0 V - - 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 555 - ns rr T = 25 C, I = I , dI/dt = 100 A/s, J F S Body Diode Reverse Recovery Charge Q -5.5 - C rr V = 20 V R Body Diode Reverse Recovery Current I -18 - A RRM Note The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. www.vishay.com Document Number: 91418 2 S10-1355-Rev. A, 14-Jun-10