New Product SiA483DJ Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET Thermally Enhanced PowerPAK SC-70 Package V (V) R () (Max.) I (A) Q (Typ.) DS DS(on) D g a - Small Footprint Area 0.021at V = - 10 V - 12 GS - 30 21 nC - Low On-Resistance a 0.030 at V = - 4.5 V - 12 GS 100 % R Tested g Material categorization: For definitions of compliance please see PowerPAK SC-70-6L-Single www.vishay.com/doc 99912 1 APPLICATIONS D Smart Phones, Tablet PCs, Mobile Computing: 2 D - Battery Switches 3 - Load Switches G D - Power Management 6 - DC/DC Converters S D 5 S S 2.05 mm Marking Code 2.05 mm 4 G B Y X Ordering Information: Part code X X X SiA483DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) Lot Traceability and Date code P-Channel MOSFET D ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit V Drain-Source Voltage - 30 DS V Gate-Source Voltage V 20 GS a T = 25 C - 12 C a T = 70 C - 12 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 10 A b, c T = 70 C A - 8 A Pulsed Drain Current (t = 300 s) I - 40 DM a T = 25 C - 12 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 2.9 A T = 25 C 19 C T = 70 C 12 C Maximum Power Dissipation P W D b, c T = 25 C 3.5 A b, c T = 70 C 2.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f Maximum Junction-to-Ambient t 5 s R 28 36 thJA C/W Maximum Junction-to-Case (Drain) Steady State R 5.3 6.5 thJC Notes: a. Package limited b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 C/W. Document Number: 62779 For technical questions, contact: pmostechsupport vishay.com www.vishay.com S12-2394-Rev. A, 15-Oct-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000New Product SiA483DJ Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 21 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 4.6 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 1 - 2.2 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 30 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 10 V - 10 A D(on) DS GS V = - 10 V, I = - 5 A 0.016 0.021 GS D a Drain-Source On-State Resistance R DS(on) V = - 4.5 V, I = - 3 A 0.024 0.030 GS D a Forward Transconductance g V = - 10 V, I = - 5 A 23 S fs DS D b Dynamic Input Capacitance C 1550 iss Output Capacitance C V = - 15 V, V = 0 V, f = 1 MHz 175 pF oss DS GS Reverse Transfer Capacitance C 150 rss V = - 15 V, V = - 10 V, I = - 10 A 29 45 DS GS D Total Gate Charge Q g 14 21 nC Gate-Source Charge Q V = - 15 V, V = - 4.5 V, I = - 10 A 4.4 gs DS GS D Gate-Drain Charge Q 4.8 gd Gate Resistance R f = 1 MHz 0.7 3.7 7.4 g Turn-On Delay Time t 37 80 d(on) Rise Time t 30 60 r V = - 15 V, R = 1.9 DD L I - 8 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 25D GEN g 50 d(off) Fall Time t 820 f ns Turn-On Delay Time t 10 10 d(on) Rise Time t 10 20 r V = - 15 V, R = 1.9 DD L I - 8 A, V = - 10 V, R = 1 Turn-Off Delay Time t 27D GEN g 55 d(off) Fall Time t 920 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 12 S C A Pulse Diode Forward Current I - 40 SM Body Diode Voltage V I = - 8 A, V = 0 - 0.8 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 17 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 8 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 10 a ns Reverse Recovery Rise Time t 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com For technical questions, contact: pmostechsupport vishay.com Document Number: 62779 2 S12-2394-Rev. A, 15-Oct-12 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000