Si1079X www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g Typical ESD performance 2500 V 0.100 at V = -4.5 V -1.44 GS 100 % R tested g -30 0.112 at V = -3.7 V -1.36 8.1 nC GS Material categorization: 0.140 at V = -2.5 V -1.22 GS For definitions of compliance please see www.vishay.com/doc 99912 SC-89 Single (6 leads) S APPLICATIONS 4 D Load switch for portable devices 5 D 6 Power management S 3 G 2 D 1 G D Top View Marking Code: C Ordering Information: D Si1079X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V -30 DS V Gate-Source Voltage V 12 GS b, c T = 25 C -1.44 A Continuous Drain Current (T = 150 C) I J D b, c T = 70 C -1.15 A A Pulsed Drain Current (t = 300 s) I -8 DM b, c Continuous Source-Drain Diode Current T = 25 C I -0.28 A S b, c T = 25 C 0.33 A Maximum Power Dissipation P W D b, c T = 70 C 0.21 A Operating Junction and Storage Temperature Range T , T -55 to 150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t 5 s 300 375 a, b Maximum Junction-to-Ambient R C/W thJA Steady State 360 450 Notes a. Maximum under steady state conditions is 450 C/W. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. S14-1436-Rev. A, 14-Jul-14 Document Number: 62966 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1079X www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONSMIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = -250 A -30 - - V DS GS D V Temperature Coefficient V /T --21 - DS DS J I = -250 A mV/C D V Temperature Coefficient V /T -3 - GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = -250 A -0.6 - -1.5 V GS(th) DS GS D V = 0 V, V = 12 V - - 10 DS GS Gate-Source Leakage I GSS V = 0 V, V = 4.5 V - - 1 DS GS A V = -30 V, V = 0 V - - -1 DS GS Zero Gate Voltage Drain Current I DSS V = -30 V, V = 0 V, T = 85 C - - -10 DS GS J a On-State Drain Current I V = -5 V, V = -4.5 V -8 - - A D(on) DS GS V = -4.5 V, I = -1.4 A - 0.083 0.100 GS D a Drain-Source On-State Resistance R V = -3.7 V, I = -1.3 A - 0.093 0.112 DS(on) GS D V = -2.5 V, I = -0.7 A - 0.108 0.140 GS D Forward Transconductance g V = -15 V, I = -1.4 A - 10 - S fs DS D b Dynamic Input Capacitance C - 750 - iss Output Capacitance C -6V = -15 V, V = 0 V, f = 1 MHz7- pF oss DS GS Reverse Transfer Capacitance C -60 - rss V = -15 V, V = -10 V, I = -1.4 A - 17 26 DS GS D Total Gate Charge Q g -8.1 13 nC Gate-Source Charge Q V = -15 V, V = -4.5 V, I = -1.4 A -1.2 - gs DS GS D Gate-Drain Charge Q -2.2- gd Gate Resistance R f = 1 MHz 3.6 18 36 g Turn-On Delay Time t -22 33 d(on) Rise Time t -33 50 r V = -15 V, R = 13 DD L I -1.15 A, V = -4.5 V, R = 1 Turn-Off Delay Time t -5D GEN g887 d(off) Fall Time t -30 45 f ns Turn-On Delay Time t -5 10 d(on) Rise Time t -20 30 r V = -15 V, R = 13 DD L I -1.15 A, V = -10 V, R = 1 Turn-Off Delay Time t -D GEN g80120 d(off) Fall Time t -30 45 f Drain-Source Body Diode Characteristics a Pulse Diode Forward Current I -- -8 A SM Body Diode Voltage V I = -1.15 A - -0.75 -1.2 V SD S Body Diode Reverse Recovery Time t -16 24 ns rr Body Diode Reverse Recovery Charge Q - 7 14 nC rr I = -1.15 A, dI/dt = 100 A/s F Reverse Recovery Fall Time t -9 - a ns Reverse Recovery Rise Time t -7 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1436-Rev. A, 14-Jul-14 Document Number: 62966 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000