Si1302DL Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES V (V) R ( )I (A) Halogen-free According to IEC 61249-2-21 DS DS(on) D Definition 0.480 at V = 10 V 0.64 GS 30 TrenchFET Power MOSFET 0.700 at V = 4.5 V 0.53 GS Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 Marking Code KA XX 3 D Lot Traceability and Date Code S 2 Part Code Top View Ordering Information: Si1302DL-T1-E3 (Lead (Pb)-free) Si1302DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 0.64 0.60 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 0.51 0.48 A A I 1.5 Pulsed Drain Current DM a I 0.23 0.26 Continuous Diode Current (Diode Conduction) S 0.28 T = 25 C 0.31 A a P W Maximum Power Dissipation D = 70 C 0.20 0.18 T A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 355 400 a R Maximum Junction-to-Ambient thJA Steady State 380 450 C/W R Maximum Junction-to-Foot (Drain) Steady State 285 340 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71249 www.vishay.com S10-2140-Rev. F, 20-Sep-10 1 Y Y Si1302DL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.TypMax.Unit Static Gate Threshold Voltage V V = V I = 250 A 1 3 V GS(th) DS GS, D Gate-Body Leakage I V = 0 V, V = 20 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 70 C 5 DS GS J a V = 5 V, V = 10 V On-State Drain Current I DS GS 1.5 A D(on) V = 10 V, I = 0.6 A 0.410 0.480 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 0.2 A 0.600 0.700 GS D a Forward Transconductance g V = 15 V, I = 0.6 A 0.75 S fs GS D a Diode Forward Voltage V I = 0.23 A, V = 0 V 0.8 1.2 V SD S GS b Dynamic Total Gate Charge Q 0.86 1.4 g Gate-Source Charge Q V = 15 V, V = 10 V, I = 0.6 A 0.24 nC gs DS GS D Gate-Drain Charge Q 0.08 gd Turn-On Delay Time t 510 d(on) Rise Time t 815 r V = 15 V, R = 30 DD L I 0.5 A, V = 10 V, R = 6 Turn-Off DelayTime t 815 ns D GEN g d(off) Fall Time t 715 f Source-Drain Reverse Recovery Time t I = 0.23 A, dI/dt = 100 A/s 15 30 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 1.0 1.0 V = 10 V thru 4 V GS 0.8 0.8 0.6 0.6 0.4 0.4 3 V T = 125 C C 0.2 0.2 25 C - 55 C 0.0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71249 2 S10-2140-Rev. F, 20-Sep-10 I - Drain Current (A) D I - Drain Current (A) D
