X-On Electronics has gained recognition as a prominent supplier of SI1400DL-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1400DL-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1400DL-T1-GE3 Vishay

SI1400DL-T1-GE3 electronic component of Vishay
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Part No.SI1400DL-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 20V N-CH (DS) 2.5V Rated Trench
Datasheet: SI1400DL-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.3164 ea
Line Total: USD 31.64 
Availability - 11203
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
11203
Ship by Fri. 08 Nov to Thu. 14 Nov
MOQ : 100
Multiples : 1
100 : USD 0.3164
1000 : USD 0.2493
2500 : USD 0.2291
5000 : USD 0.2256
7500 : USD 0.2224
25000 : USD 0.1912
50000 : USD 0.1884
100000 : USD 0.1823

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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We are delighted to provide the SI1400DL-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1400DL-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1400DL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) DS DS(on) D Definition 0.150 at V = 4.5 V 1.7 GS TrenchFET Power MOSFET: 2.5 V Rated - 20 0.235 at V = 2.5 V 1.3 GS Compliant to RoHS Directive 2002/95/EC SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code ND XX 5 D 2 D Lot Traceability and Date Code Part Code G 3 4 S Top View Ordering Information: Si1400DL-T1-E3 (Lead (Pb)-free) Si1400DL-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V 20 DS V Gate-Source Voltage V 12 GS T = 25 C 1.7 1.6 A a Continuous Drain Current (T = 150 C) I J D T = 85 C 1.2 1.0 A A Pulsed Drain Current I 5 DM a Continuous Source Current (Diode Conduction) I 0.8 0.8 S T = 25 C 0.625 0.568 A a Maximum Power Dissipation P W D T = 85 C 0.40 0.295 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 165 200 a Maximum Junction-to-Ambient R thJA Steady State 180 220 C/W Maximum Junction-to-Foot (Drain) Steady State R 105 130 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71179 www.vishay.com S10-0721-Rev. D, 29-Mar-10 1 YYSi1400DL Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Gate Threshold Voltage V V = V , I = 250 A 0.6 V GS(th) DS GS D Gate-Body Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 16 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 16 V, V = 0 V, T = 85 C 5 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 2 A D(on) DS GS V = 4.5 V, I = 1.7 A 0.123 0.150 GS D a Drain-Source On-State Resistance R DS(on) V = 2.5 V, I = 1.3 A 0.195 0.235 GS D a Forward Transconductance g V = 10 V, I = 1.7 A 5 S fs DS D a Diode Forward Voltage V I = 0.8 A, V = 0 V 0.78 1.1 V SD S GS b Dynamic Total Gate Charge Q 2.1 4.0 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 1.7 A 0.3 nC gs DS GS D Gate-Drain Charge Q 0.4 gd Turn-On Delay Time t 10 17 d(on) Rise Time t 30 50 r V = 10 V, R = 20 DD L I 1 A, V = 4.5 V, R = 6 Turn-Off Delay Time t 14D GEN g 25 ns d(off) Fall Time t 815 f Source-Drain Reverse Recovery Time t I = 0.8 A, dI/dt = 100 A/s 30 50 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 5 5 2.5 V V = 4.5 V thru 3 V GS 4 4 3 3 2 2 2 V T = 125 C C 1 1 25 C -55 C 1.5 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.5 1.0 1.5 2.0 2.5 3.0 V - Drain-to-Source Voltage (V) V Gate-to-So- urce Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71179 2 S10-0721-Rev. D, 29-Mar-10 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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