Si1965DH Vishay Siliconix Dual P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.390 at V = - 4.5 V - 1.3 GS TrenchFET Power MOSFET - 12 0.535 at V = - 2.5 V - 1.2 1.7 nC GS Compliant to RoHS Directive 2002/95/EC 0.710 at V = - 1.8 V - 1.1 GS APPLICATIONS Load Switch for Portable Devices SOT-363 SC-70 (6-LEADS) S S 1 2 S 1 6 D 1 1 Marking Code 5 G 2 G 1 2 DE XX G G 1 2 Lot Traceability and Date Code D 3 4 S 2 2 Part Code Top View D D 1 2 Ordering Information: Si1965DH-T1-E3 (Lead (Pb)-free) P-Channel MOSFET P-Channel MOSFET Si1965DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V - 12 Drain-Source Voltage DS V Gate-Source Voltage V 8 GS a T = 25 C - 1.3 C T = 70 C - 1.2 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 1.14 A b, c T = 70 C - 0.9 A A Pulsed Drain Current I - 3 DM = 25 C T - 1 C Continuous Source-Drain Diode Current I b, c S T = 25 C - 0.6 A T = 25 C 1.25 C T = 70 C 0.8 C Maximum Power Dissipation P W D b, c T = 25 C 0.74 A b, c T = 70 C 0.47 A Operating Junction and Storage Temperature Range T , T C - 55 to 150 J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d R t 5 s 130 170 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 80 100 thJF Notes: a. Package limited. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 220 C/W. Document Number: 68765 www.vishay.com S10-0792-Rev. B, 05-Apr-10 1 YYSi1965DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 12 V DS GS D V Temperature Coefficient V /T - 14 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 1.0 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 85 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 3 A D(on) DS GS V = - 4.5 V, I = - 1.0 A 0.315 0.390 GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 0.86 A 0.425 0.535 DS(on) GS D V = - 1.8 V, I = - 0.25 A 0.550 0.710 GS D a Forward Transconductance g V = - 6 V, I = - 1.0 A 2.5 S fs DS D b Dynamic Input Capacitance C 120 iss Output Capacitance C 41V = - 6 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 25 rss V = - 6 V, V = - 8 V, I = - 1.1 A 2.8 4.2 DS GS D Total Gate Charge Q g 1.7 2.6 nC Gate-Source Charge Q 0.3V = - 6 V, V = - 4.5 V, I = - 1.1 A gs DS GS D Gate-Drain Charge Q 0.4 gd Gate Resistance R f = 1 MHz 7.5 g Turn-On Delay Time t 12 20 d(on) Rise Time t 2740 r V = - 6 V, R = 6.7 DD L I - 0.9 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 1525 D GEN g d(off) Fall Time t 10 15 f ns Turn-On Delay Time t 25 d(on) Rise Time t 1220 r V = - 6 V, R = 6.7 DD L I - 0.9 A, V = - 8 V, R = 1 Turn-Off Delay Time t 12D GEN g 20 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 1.0 S C A a Pulse Diode Forward Current I - 3.0 SM Body Diode Voltage V I = - 0.9 A - 0.8 - 1.2 V SD S Body Diode Reverse Recovery Time t 20 40 ns rr Body Diode Reverse Recovery Charge Q 10 20 nC rr I = - 0.9 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 9.5 a ns Reverse Recovery Rise Time t 11.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68765 2 S10-0792-Rev. B, 05-Apr-10
