Si2301BDS Vishay Siliconix P-Channel 2.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 b V (V) R ( ) I (A) Definition DS DS(on) D 0.100 at V = - 4.5 V TrenchFET Power MOSFET - 2.4 GS - 20 100 % R Tested 0.150 at V = - 2.5 V - 2.0 g GS Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2 Top View Si2301 BDS (L1)* * Marking Code Ordering Information: Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 20 DS V Gate-Source Voltage V 8 GS T = 25 C - 2.4 - 2.2 A b I Continuous Drain Current (T = 150 C) D J T = 70 C - 1.9 - 1.8 A A a I - 10 Pulsed Drain Current DM b I - 0.72 - 0.6 Continuous Source Current (Diode Conduction) S T = 25 C 0.9 0.7 A b P W Power Dissipation D T = 70 C 0.57 0.45 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b 120 145 Maximum Junction-to-Ambient R C/W thJA c 140 175 Maximum Junction-to-Ambient Notes: a. Pulse width limited by maximum junction temperature. b. Surface mounted on FR4 board, t 5 s. c. Surface mounted on FR4 board. * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72066 www.vishay.com S11-2044-Rev. F, 17-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si2301BDS Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 20 DS GS D V V V = V , I = - 250 A Gate Threshold Voltage - 0.45 - 0.95 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J V - 5 V, V = - 4.5 V - 6 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 2.5 V - 3 DS GS V - 4.5 V, I = - 2.8 A 0.080 0.100 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 2 A 0.110 0.150 GS D a g V = - 5 V, I = - 2.8 A 6.5 S Forward Transconductance fs DS D Diode Forward Voltage V I = - 0.75 A, V = 0 V - 0.80 - 1.2 V SD S GS b Dynamic Q Total Gate Charge 4.5 10 g V = - 6 V, V = - 4.5 V DS GS Q Gate-Source Charge 0.7 nC gs I - 2.8 A D Q Gate-Drain Charge 1.1 gd R Gate Resistance f = 1 MHz 2 8 16 g C Input Capacitance 375 iss Output Capacitance C V = - 6 V, V = 0 V, f = 1 MHz 95 pF oss DS GS C Reverse Transfer Capacitance 65 rss c Switching t 20 30 d(on) Turn-On Time V = - 6 V, R = 6 DD L t 40 60 r I - 1 A, V = - 4.5 V ns D GEN t 30 45 d(off) R = 6 g Turn-Off Time t 20 30 f Notes: a. Pulse test: pulse width 300 s duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72066 2 S11-2044-Rev. F, 17-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000