X-On Electronics has gained recognition as a prominent supplier of SI1902CDL-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1902CDL-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1902CDL-T1-GE3 Vishay

SI1902CDL-T1-GE3 electronic component of Vishay
SI1902CDL-T1-GE3 Vishay
SI1902CDL-T1-GE3 MOSFETs
SI1902CDL-T1-GE3  Semiconductors

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See Product Specifications
Part No. SI1902CDL-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 20V Vds 12V Vgs SC70-6
Datasheet: SI1902CDL-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.2683 ea
Line Total: USD 1.34 
Availability - 3773
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
17460
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1152
6000 : USD 0.1089
12000 : USD 0.1071
15000 : USD 0.1065
45000 : USD 0.1032

3773
Ship by Fri. 14 Feb to Wed. 19 Feb
MOQ : 5
Multiples : 5
5 : USD 0.2683
50 : USD 0.2105
150 : USD 0.1595
500 : USD 0.1196
3000 : USD 0.1091
6000 : USD 0.1026

2425
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.504
10 : USD 0.3332
100 : USD 0.1848
103 : USD 0.1694
283 : USD 0.1596

17460
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1175

11640
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1762
12000 : USD 0.1611

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the SI1902CDL-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1902CDL-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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The SI1902CDL-T1-GE3 is an N-channel, depletion-mode MOSFET (metal oxide semiconductor field effect transistor) manufactured by Vishay. It is designed for use as a small-signal, logic-level switch in high-performance signal switching applications. This MOSFET has a drain-source voltage (Vds) limit of 20V and a gate-source voltage (Vgs) limit of 12V. It comes in a SC70-6 package, which is a 6-lead surface mount package with a low profile of 2.1 mm and a small body size of 2.0 mm × 1.25 mm. It is RoHS compliant and Halogen-free. It has an industry-standard maximum gate source leakage current of 1 µA.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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