X-On Electronics has gained recognition as a prominent supplier of SI1426DH-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1426DH-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1426DH-T1-E3 Vishay

SI1426DH-T1-E3 electronic component of Vishay
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Part No.SI1426DH-T1-E3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 30V 3.6A 0.075Ohm
Datasheet: SI1426DH-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.2516 ea
Line Total: USD 754.8 
Availability - 0
MOQ: 3000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 1
3000 : USD 0.2516

   
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Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the SI1426DH-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1426DH-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Si1426DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.075 at V = 10 V 3.6 GS TrenchFET Power MOSFET 30 0.115 at V = 4.5 V 2.9 GS Thermally Enhanced SC-70 Package PWM Optimized Compliant to RoHS Directive 2002/95/EC APPLICATIONS Boost Converter in Portable Devices - Low Gate Charge (3 nC) Low Current Synchronous Rectifier SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code 5 D 2 D AC XX Lot Traceability G 3 4 S and Date Code Part Code Top View Ordering Information: Si1426DH-T1-E3 (Lead (Pb)-free) Si1426DH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage 30 DS V V Gate-Source Voltage 20 GS T = 25 C 3.6 2.8 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 2.6 2.1 A A Pulsed Drain Current I 10 DM a I 1.3 0.8 Continuous Diode Current (Diode Conduction) S T = 25 C 1.6 1.0 A a P W Maximum Power Dissipation D T = 85 C 0.8 0.5 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 60 80 a R Maximum Junction-to-Ambient thJA Steady State 100 125 C/W R Maximum Junction-to-Foot (Drain) Steady State 34 45 thJF Note: a. Surface mounted on 1 x 1 FR4 board. Document Number: 71805 www.vishay.com S10-0935-Rev. B, 19-Apr-10 1 YYSi1426DH Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.80 2.5 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 24 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 24 V, V = 0 V, T = 85 C 5 DS GS J a I V = 5 V, V = 10 V 10 A On-State Drain Current D(on) DS GS V = 10 V, I = 3.6 A 0.061 0.075 GS D a R Drain-Source On-State Resistance DS(on) V = 4.5 V, I = 2.0 A 0.092 0.115 GS D a g V = 10 V, I = 3.6 A 5S Forward Transconductance fs DS D a V I = 1.3 A, V = 0 V 0.78 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 1.9 3 g Q V = 15 V, V = 4.5 V, I = 3.6 A Gate-Source Charge 0.75 nC gs DS GS D Gate-Drain Charge Q 0.75 gd t Turn-On Delay Time 10 15 d(on) Rise Time t 12 18 V = 15 V, R = 15 r DD L I 1 A, V = 10 V, R = 6 t Turn-Off Delay Time D GEN g 15 22 ns d(off) Fall Time t 915 f t I = 1.4 A, dI/dt = 100 A/s Source-Drain Reverse Recovery 40 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 10 10 V = 10 V thru 5 V GS 4 V 8 8 6 6 4 4 3 V T = 125 C C 2 2 25 C - 55 C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1234 5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71805 2 S10-0935-Rev. B, 19-Apr-10 I - Drain Current (A) D I - Drain Current (A) D

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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