Si1304BDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 a V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.270 at V = 4.5 V 0.90 TrenchFET Power MOSFET GS 30 1.1 100 % R Tested 0.385 at V = 2.5 V 0.75 g GS Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 D Marking Code 3 D KF XX Lot Traceability and Date Code S 2 G Part Code Top View S Ordering Information: Si1304BDL-T1-E3 (Lead (Pb)-free) Si1304BDL-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol LimitUnit Drain-Source Voltage V 30 DS V Gate-Source Voltage V 12 GS T = 25 C 0.90 C T = 70 C 0.71 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 0.85 A b, c T = 70 C 0.68 A A Pulsed Drain Current I 4 DM T = 25 C 0.31 C Continuous Source-Drain Diode Current I S b, c T = 25 C 0.28 A T = 25 C 0.37 C T = 70 C 0.24 C Maximum Power Dissipation P W D b, c T = 25 C 0.34 A b, c T = 70 C 0.22 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d Maximum Junction-to-Ambient t 5 s R 315 375 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 285 340 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 360 C/W. Document Number: 73480 www.vishay.com S11-2000-Rev. D, 10-Oct-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 YYSi1304BDL Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V DS GS D V Temperature Coefficient V /T 27.3 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T 3 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 0.6 1.3 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 12 V 100 nA GSS DS GS V = 30 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 30 V, V = 0 V, T = 70 C 5 DS GS J a On-State Drain Current I V 5 V, V = 4.5 V 4 A D(on) DS GS V = 4.5 V, I = 0.9 0.216 0.270 GS D a Drain-Source On-State Resistance R DS(on) V = 2.5 V, I = 0.75 0.308 0.385 GS D a Forward Transconductance g V = 15 V, I = 0.9 2 S fs DS D b Dynamic Input Capacitance C 100 iss Output Capacitance C V = 15 V, V = 0 V, f = 1 MHz 30 pF oss DS GS Reverse Transfer Capacitance C 20 rss V = 15 V, V = 4.5 V, I = 0.9 1.8 2.7 DS GS D Total Gate Charge Q g 1.1 1.7 nC Gate-Source Charge Q V = 15 V, V = 2.5 V, I = 0.9 0.4 gs DS GS D Gate-Drain Charge Q 0.6 gd Gate Resistance R f = 1 MHz 0.5 1.5 2.3 g Turn-On Delay Time t 10 15 d(on) Rise Time t 30 45 r V = 15 V, R = 22 DD L ns I 0.68 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 52D GEN g 5 d(off) Fall Time t 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode I T = 25 C 0.31 S C A a Pulse Diode Forward Current I 4 SM Body Diode Voltage V I = 0.28 A 0.8 1.2 V SD S Body Diode Reverse Recovery Time t 50 75 ns rr Body Diode Reverse Recovery Charge Q 105 160 nC rr I = 0.28 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 34 a ns Reverse Recovery Rise Time t 16 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73480 2 S11-2000-Rev. D, 10-Oct-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000