A Si1077X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V (V) R () Max. I (A) Q (Typ.) Typical ESD Performance 2500 V DS DS(on) D g 0.078 at V = - 4.5 V - 1.4 100 % R Tested GS g Material categorization: 0.098 at V = - 2.5 V - 1 GS - 20 12.1 nC For definitions of compliance please see 0.130 at V = - 1.8 V - 1 GS www.vishay.com/doc 99912 0.188 at V = - 1.5 V - 0.3 GS APPLICATIONS Load Switch for Portable Devices Power Management S SC-89 (6-LEADS) Marking Code D 1 6 D XX Lot Traceability 5 D 2 D and Date Code G Part Code G 3 4 S D Top View Ordering Information: Si1077X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V V Gate-Source Voltage 8 GS b, c T = 25 C A - 1.75 Continuous Drain Current (T = 150 C) I J D b, c T = 70 C - 1.4 A A I Pulsed Drain Current (t = 300 s) - 8 DM b, c T = 25 C I Continuous Source-Drain Diode Current A S - 0.28 b, c T = 25 C A 0.33 P Maximum Power Dissipation W D b, c T = 70 C A 0.21 Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 300 375 a, b R C/W Maximum Junction-to-Ambient thJA Steady State 360 450 Notes: a. Maximum under steady state conditions is 450 C/W. b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. Document Number: 63254 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-3081-Rev. A, 24-Dec-12 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 Y Y Si1077X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test ConditionsMin.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 11 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D V = 0 V, V = 8 V 10 DS GS I Gate-Source Leakage GSS V = 0 V, V = 4.5 V 1 DS GS A V = - 20 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current DSS V = - 20 V, V = 0 V, T = 85 C - 10 DS GS J a I V = - 5 V, V = - 4.5 V - 8 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 1.8 A 0.065 0.078 GS D V = - 2.5 V, I = - 1 A 0.081 0.098 GS D a R Drain-Source On-State Resistance DS(on) = - 1.8 V, I = - 1 A V 0.100 0.130 GS D V = - 1.5 V, I = - 0.3 A 0.125 0.188 GS D g Forward Transconductance V = - 10 V, I = - 1.8 A 10 S fs DS D b Dynamic Input Capacitance C 965 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 110 pF oss DS GS C Reverse Transfer Capacitance 101 rss V = - 10 V, V = - 8 V, I = - 1.75 A 20.7 31.1 DS GS D Q Total Gate Charge g 12.1 18.2 nC Gate-Source Charge Q V = - 10 V, V = - 4.5 V, I = - 1.75 A 1.85 gs DS GS D Q Gate-Drain Charge 2.21 gd R Gate Resistance f = 1 MHz 3.6 18 36 g Turn-On Delay Time t 24 36 d(on) t Rise Time V = - 10 V, R = 7.1 17 26 r DD L ns I - 1.4 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 95 145 D GEN g d(off) t Fall Time 28 42 f t Turn-On Delay Time 510 d(on) Rise Time t 816 V = - 10 V, R = 7.1 r DD L ns I = - 1.4 A, V = - 8 V, R = 1 t Turn-Off Delay Time D GEN g 115 173 d(off) t Fall Time 26 39 f Drain-Source Body Diode Characteristics a I - 8 A Pulse Diode Forward Current SM Body Diode Voltage V I = - 1.4 A - 0.75 - 1.2 V SD S t Body Diode Reverse Recovery Time 16 24 ns rr Q Body Diode Reverse Recovery Charge 714 nC rr I = - 1.4 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 9 a ns t Reverse Recovery Rise Time 7 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 63254 www.vishay.com For technical questions, contact: pmostechsupport vishay.com S12-3081-Rev. A, 24-Dec-12 2 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000