Si1026X Vishay Siliconix N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()V (V) I (mA) DS(min) DS(on) GS(th) D Definition 1.40 at V = 10 V 60 1 to 2.5 500 GS Low On-Resistance: 1.40 Low Threshold: 2 V (typ.) Low Input Capacitance: 30 pF Fast Switching Speed: 15 ns (typ.) Low Input and Output Leakage ESD Protected: 2000 V Miniature Package Compliant to RoHS Directive 2002/95/EC BENEFITS SC-89 Low Offset Voltage S D Low-Voltage Operation 1 6 1 1 High-Speed Circuits Low Error Voltage 2 5 G G Marking Code: E 1 2 Small Board Area D 3 4 S 2 2 APPLICATIONS Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Top View Memories, Transistors, etc. Battery Operated Systems Ordering Information: Si1026X-T1-GE3 (Lead (Pb)-free and Halogen-free) Solid-State Relays ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit Drain-Source Voltage V 60 DS V V Gate-Source Voltage 20 GS T = 25 C 320 305 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 230 220 A mA b I - 650 Pulsed Drain Current DM a I 450 380 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 A a P mW Maximum Power Dissipation D T = 85 C 145 130 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Document Number: 71434 www.vishay.com S10-2432-Rev. D, 25-Oct-10 1Si1026X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 10 A Drain-Source Breakdown Voltage 60 DS GS D V V V = V , I = 0.25 mA Gate Threshold Voltage 1 2.5 GS(th) DS GS D V = 0 V, V = 10 V 150 DS GS I Gate-Body Leakage nA GSS V = 0 V, V = 5 V 50 DS GS V = 60 V, V = 0 V A 1 DS GS I Zero Gate Voltage Drain Current DSS V = 60 V, V = 0 V, T = 85 C 10 DS GS J V = 10 V, V = 4.5 V 500 DS GS a I mA On-State Drain Current D(on) V = 7.5 V, V = 10 V 800 DS GS V = 4.5 V, I = 200 mA 3.0 GS D a R V = 10 V, I = 500 mA 1.40 Drain-Source On-Resistance DS(on) GS D V = 10 V, I = 500 mA, T = 125 C 2.50 GS D J a g V = 10 V, I = 200 mA 200 mS Forward Transconductance fs DS D a V V = 0 V, I = 200 mA 1.40V Diode Forward Voltage SD GS S b Dynamic Q Total Gate Charge 600 g Q V = 10 V, I = 250 mA, V = 4.5 V Gate-Source Charge 120 pC gs DS D GS Q Gate-Drain Charge 225 gd C Input Capacitance 30 iss V = 25 V, V = 0 V, DS GS C Output Capacitance 6 pF oss f = 1 MHz C Reverse Transfer Capacitance 3 rss b, c Switching t Turn-On Time V = 30 V, R = 150 15 (on) DD L ns I = 200 mA, V = 10 V, R = 10 t Turn-Off Time D GEN g 20 (off) Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71434 2 S10-2432-Rev. D, 25-Oct-10