Si1032R/X Vishay Siliconix N-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (mA) DS DS(on) D Definition 5 at V = 4.5 V 200 GS Low-Side Switching Low On-Resistance: 5 7 at V = 2.5 V 175 GS 20 Low Threshold: 0.9 V (typ.) 9 at V = 1.8 V 150 GS Fast Switching Speed: 35 ns 10 at V = 1.5 V 50 GS TrenchFET Power MOSFETs: 1.5 V Rated 2000 V ESD Protection Compliant to RoHS Directive 2002/95/EC BENEFITS Ease in Driving Switches SC-75A or SC-89 Low Offset (Error) Voltage Low-Voltage Operation G 1 High-Speed Circuits Low Battery Voltage Operation 3 D APPLICATIONS S 2 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Marking Code: G Memories Top View Battery Operated Systems Ordering Information: Power Supply Converter Circuits Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Load/Power Switching Cell Phones, Pagers Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Si1032R Si1032X Parameter Symbol Unit 5 s Steady State 5 s Steady State V Drain-Source Voltage 20 DS V V Gate-Source Voltage 6 GS T = 25 C 200 140 210 200 A a I Continuous Drain Current (T = 150 C) D J T = 85 C 110 100 150 140 A mA a Pulsed Drain Current I 500 600 DM a I 250 200 300 240 Continuous Source Current (Diode Conduction) S T = 25 C 280 250 340 300 A a P mW Maximum Power Dissipation for SC-75 D T = 85 C 145 130 170 150 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg Gate-Source ESD Rating (HBM, Method 3015) ESD 2000 V Notes: a. Surface mounted on FR4 board. Document Number: 71172 www.vishay.com S10-2544-Rev. F, 08-Nov-10 1Si1032R/X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) A Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 0.40 0.7 1.2 V GS(th) DS GS D V = 0 V, V = 2.8 V 0.5 1.0 DS GS I Gate-Body Leakage GSS V = 0 V, V = 4.5 V 1.0 3.0 DS GS A V = 20 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current DSS V = 20 V, V = 0 V, T = 55 C 10 DS GS J a I V = 5 V, V = 4.5 V 250 mA On-State Drain Current D(on) DS GS V = 4.5 V, I = 200 mA 5 GS D V = 2.5 V, I = 175 mA 7 GS D a R Drain-Source On-State Resistance DS(on) V = 1.8 V, I = 150 mA 9 GS D V = 1.5 V, I = 40 mA 10 GS D a Forward Transconductance g V = 10 V, I = 200 mA 0.5 S fs DS D a V I = 150 mA, V = 0 V Diode Forward Voltage 1.2 V SD S GS b Dynamic Q Total Gate Charge 750 g Gate-Source Charge Q V = 10 V, V = 4.5 V, I = 250 mA 75 pC gs DS GS D Q Gate-Drain Charge 225 gd t Turn-On Delay Time 50 d(on) t Rise Time V = 10 V, R = 47 25 r DD L ns I 200 mA, V = 4.5 V, R = 10 t Turn-Off Delay Time D GEN g 50 d(off) t Fall Time 25 f Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise noted) A 0.5 600 T = - 55 C J V = 5 V thru 1.8 V GS 500 0.4 25 C 400 0.3 125 C 300 0.2 200 0.1 100 1 V 0.0 0 0123456 0.0 0.5 1.0 1.5 2.0 2.5 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71172 2 S10-2544-Rev. F, 08-Nov-10 I - Drain Current (A) D I - Drain Current (mA) D