Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS2 DS(on) D Definition 0.625 at V = 4.5 V 0.43 IN TrenchFET Power MOSFET 1.8 to 8 0.890 at V = 2.5 V 0.36 IN 1.8 V to 8 V Input 1.25 at V = 1.8 V 0.3 IN 1.5 V to 8 V Logic Level Control Smallest LITTLE FOOT Package: 1.6 mm x 1.6 mm Si1040X 2000 V ESD Protection On Input Switch, V ON/OFF 4 2, 3 D2 Adjustable Slew-Rate S2 Q2 Compliant to RoHS Directive 2002/95/EC 6 R1, C1 DESCRIPTION The Si1040X includes a p- and n-Channel MOSFET in a single SC89-6 package. The low on-resistance p-channel Q1 5 ON/OFF TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level- shift to drive the p-channel load-switch. The n-channel 1 MOSFET has internal ESD protection and can be driven by R2 logic signals as low as 1.5 V. The Si1040X operates on supply lines from 1.8 V to 8 V, and can drive loads up to SC89-6 0.43 A. Top View R2 R1, C1 1 6 Marking Code PWL D2 5 ON/OFF 2 Lot Traceability and Date Code D2 S2 3 4 Part Number Code Ordering Information: Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free) TYPICAL APPLICATION CIRCUIT Si1040X Switching Variation R2 at V = 2.5 V, R1 = 20 k IN 20 2, 3 t 4 f V OUT 16 V IN Q2 R1 C1 I = 0.36 A L 6 6 V = 3 V ON/OFF 12 C = 10 F i C = 1 F o 8 5 t r ON/OFF C LOAD o t d(off) Q1 4 t d(on) C i 1 0 02 4 6 8 10 R2 R2 (k) Note: For R2 switching variations with other V /R1 IN GND R2 combinations See Typical Characteristics Document Number: 71809 www.vishay.com S10-2544-Rev. D, 08-Nov-10 1 Time (s)Si1040X Vishay Siliconix The Si1040X is ideally suited for high-side load switching in COMPONENTS portable applications. The integrated N-Channel level-shift a R1 Pull-Up Resistor Typical 10 k to 1 m device saves space by reducing external components. The a R2 Optional Slew-Rate Control Typical 0 to 100 k slew rate is set externally so that rise-times can be tailored to C1 Optional Slew-Rate Control Typical 1000 pF different load types. Notes: a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn- on. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Input Voltage V 8 IN V V ON/OFF Voltage 8 ON/OFF a, b 0.43 Continuous I Load Current L b, c 1.0 A Pulsed a I - 0.15 Continuous Intrinsic Diode Conduction S a P 0.174 W Maximum Power Dissipation D T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) ESD 2 kV THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a R 600 720 Maximum Junction-to-Ambient (Continuous Current) thJA C/W R Maximum Junction-to-Foot (Q2) 450 540 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit OFF Characteristics I V = 8 V, V = 0 V Reverse Leakage Current 1 A FL IN ON/OFF V I = - 0.15 A Diode Forward Voltage 0.85 1.2 V SD S ON Characteristics V V Input Voltage Range 1.8 8 IN V = 1.5 V, V = 4.5 V, I = 0.43 A 0.500 0.625 ON/OFF IN D R V = 1.5 V, V = 2.5 V, I = 0.36 A On-Resistance (P-Channel) at 1 A 0.710 0.890 DS(on) ON/OFF IN D V = 1.5 V, V = 1.8 V, I = 0.3 A 1.0 1.25 ON/OFF IN D V 0.2 V, V = 5 V, V = 1.5 V 1 IN-OUT IN ON/OFF I On-State (P-Channel) Drain Current A D(on) V 0.3 V, V = 3 V, V = 1.5 V 0.8 IN-OUT IN ON/OFF Notes: a. Surface mounted on FR4 board. b. V = 8 V, V = 8 V, T = 25 C. IN ON/OFF A c. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71809 2 S10-2544-Rev. D, 08-Nov-10