X-On Electronics has gained recognition as a prominent supplier of SI1040X-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1040X-T1-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI1040X-T1-GE3 Vishay

SI1040X-T1-GE3 electronic component of Vishay
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Part No.SI1040X-T1-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET -8V Vds V Vgs SC89-6
Datasheet: SI1040X-T1-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5764 ea
Line Total: USD 0.58 
Availability - 28902
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3706
6000 : USD 0.3576
9000 : USD 0.354
15000 : USD 0.3527
21000 : USD 0.3492
30000 : USD 0.3445

509
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 9
Multiples : 1
9 : USD 0.5527
12 : USD 0.4374
25 : USD 0.4347
100 : USD 0.384
250 : USD 0.3814
500 : USD 0.3744

102
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 0.7079
10 : USD 0.6374
30 : USD 0.5982
100 : USD 0.5547
500 : USD 0.5361
1000 : USD 0.5267

28902
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5764
10 : USD 0.3971
100 : USD 0.3377
500 : USD 0.3289
1000 : USD 0.3179
3000 : USD 0.3003
6000 : USD 0.2981
9000 : USD 0.2948
24000 : USD 0.2937

5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3779
6000 : USD 0.3645
9000 : USD 0.3609

5820
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.3589
6000 : USD 0.3463
9000 : USD 0.3428
15000 : USD 0.3415
21000 : USD 0.3381
30000 : USD 0.3335

509
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 21
Multiples : 1
21 : USD 0.4236
25 : USD 0.4209
100 : USD 0.3719
250 : USD 0.3693
500 : USD 0.3625

   
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We are delighted to provide the SI1040X-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1040X-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS2 DS(on) D Definition 0.625 at V = 4.5 V 0.43 IN TrenchFET Power MOSFET 1.8 to 8 0.890 at V = 2.5 V 0.36 IN 1.8 V to 8 V Input 1.25 at V = 1.8 V 0.3 IN 1.5 V to 8 V Logic Level Control Smallest LITTLE FOOT Package: 1.6 mm x 1.6 mm Si1040X 2000 V ESD Protection On Input Switch, V ON/OFF 4 2, 3 D2 Adjustable Slew-Rate S2 Q2 Compliant to RoHS Directive 2002/95/EC 6 R1, C1 DESCRIPTION The Si1040X includes a p- and n-Channel MOSFET in a single SC89-6 package. The low on-resistance p-channel Q1 5 ON/OFF TrenchFET is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level- shift to drive the p-channel load-switch. The n-channel 1 MOSFET has internal ESD protection and can be driven by R2 logic signals as low as 1.5 V. The Si1040X operates on supply lines from 1.8 V to 8 V, and can drive loads up to SC89-6 0.43 A. Top View R2 R1, C1 1 6 Marking Code PWL D2 5 ON/OFF 2 Lot Traceability and Date Code D2 S2 3 4 Part Number Code Ordering Information: Si1040X-T1-GE3 (Lead (Pb)-free and Halogen-free) TYPICAL APPLICATION CIRCUIT Si1040X Switching Variation R2 at V = 2.5 V, R1 = 20 k IN 20 2, 3 t 4 f V OUT 16 V IN Q2 R1 C1 I = 0.36 A L 6 6 V = 3 V ON/OFF 12 C = 10 F i C = 1 F o 8 5 t r ON/OFF C LOAD o t d(off) Q1 4 t d(on) C i 1 0 02 4 6 8 10 R2 R2 (k) Note: For R2 switching variations with other V /R1 IN GND R2 combinations See Typical Characteristics Document Number: 71809 www.vishay.com S10-2544-Rev. D, 08-Nov-10 1 Time (s)Si1040X Vishay Siliconix The Si1040X is ideally suited for high-side load switching in COMPONENTS portable applications. The integrated N-Channel level-shift a R1 Pull-Up Resistor Typical 10 k to 1 m device saves space by reducing external components. The a R2 Optional Slew-Rate Control Typical 0 to 100 k slew rate is set externally so that rise-times can be tailored to C1 Optional Slew-Rate Control Typical 1000 pF different load types. Notes: a. Minimum R1 value should be at least 10 x R2 to ensure Q1 turn- on. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Input Voltage V 8 IN V V ON/OFF Voltage 8 ON/OFF a, b 0.43 Continuous I Load Current L b, c 1.0 A Pulsed a I - 0.15 Continuous Intrinsic Diode Conduction S a P 0.174 W Maximum Power Dissipation D T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 ) ESD 2 kV THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit a R 600 720 Maximum Junction-to-Ambient (Continuous Current) thJA C/W R Maximum Junction-to-Foot (Q2) 450 540 thJC Notes: a. Surface mounted on 1 x 1 FR4 board. SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min.Typ.Max.Unit OFF Characteristics I V = 8 V, V = 0 V Reverse Leakage Current 1 A FL IN ON/OFF V I = - 0.15 A Diode Forward Voltage 0.85 1.2 V SD S ON Characteristics V V Input Voltage Range 1.8 8 IN V = 1.5 V, V = 4.5 V, I = 0.43 A 0.500 0.625 ON/OFF IN D R V = 1.5 V, V = 2.5 V, I = 0.36 A On-Resistance (P-Channel) at 1 A 0.710 0.890 DS(on) ON/OFF IN D V = 1.5 V, V = 1.8 V, I = 0.3 A 1.0 1.25 ON/OFF IN D V 0.2 V, V = 5 V, V = 1.5 V 1 IN-OUT IN ON/OFF I On-State (P-Channel) Drain Current A D(on) V 0.3 V, V = 3 V, V = 1.5 V 0.8 IN-OUT IN ON/OFF Notes: a. Surface mounted on FR4 board. b. V = 8 V, V = 8 V, T = 25 C. IN ON/OFF A c. Pulse test pulse width 300 s, duty cycle 2 %. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 71809 2 S10-2544-Rev. D, 08-Nov-10

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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