Si1069X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition 0.184 at V = - 4.5 V - 0.94 GS TrenchFET Power MOSFET - 20 4.23 - 0.78 0.268 at V = - 2.5 V GS 100 % R Tested g Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch for Portable Devices SC-89 (6-LEADS) S D 1 6 D Marking Code 5 Y XX D 2 D G Lot Traceability and Date Code G 3 4 S Part Code Top View D Ordering Information: Si1069X-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit V Drain-Source Voltage - 20 DS V V Gate-Source Voltage 12 GS b, c T = 25 C - 0.94 A Continuous Drain Current (T = 150 C) I J D b, c T = 70 C A - 0.75 A I Pulsed Drain Current - 8 DM b, c T = 25 C I Continuous Source-Drain Diode Current - 0.2 A S b, c T = 25 C A 0.236 a P W Maximum Power Dissipation D b, c T = 70 C A 0.151 T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit t 5 s 440 530 a, b R C/W Maximum Junction-to-Ambient thJA Steady State 540 650 Notes: a. Based on T = 25 C. A b. Surface mounted on 1 x 1 FR4 board. c. t = 5 s. Document Number: 70442 www.vishay.com S19-0207-Rev. D, 04-Mar-2019 1 YYSi1069X Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test ConditionsMin.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T - 16.7 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.95 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.6 - 1.5 V GS(th) DS GS D I V = 0 V, V = 12 V Gate-Source Leakage 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 A DS GS I Zero Gate Voltage Drain Current DSS V = - 20 V, V = 0 V, T = 85 C - 10 A DS GS J a I V = 5 V, V = - 4.5 V - 8 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 0.94 A 0.153 0.184 GS D a R Drain-Source On-State Resistance DS(on) V = - 2.5 V, I = - 0.78 A 0.218 0.268 GS D Forward Transconductance g V = - 10 V, I = - 0.94 A 4S fs DS D b Dynamic C Input Capacitance 308 iss C V = - 10 V, V = 0 V, f = 1 MHz Output Capacitance 78 pF oss DS GS C Reverse Transfer Capacitance 59 rss V = - 10 V, V = - 5 V, I = - 0.94 A 4.57 6.86 DS GS D Q Total Gate Charge g 4.23 6.35 nC Q V = - 10 V, V = - 4.5 V, I = - 0.94 A Gate-Source Charge 0.71 gs DS GS D Q Gate-Drain Charge 1.67 gd R Gate Resistance f = 1 MHz 9 13.5 g Turn-On Delay Time t 19 28.5 d(on) t Rise Time V = - 10 V, R = 13.3 31 47 r DD L ns I - 0.75 A, V = - 4.5 V, R = 1 t Turn-Off DelayTime D GEN g 23 34.5 d(off) Fall Time t 7 10.5 f Drain-Source Body Diode Characteristics a I 8A Pulse Diode Forward Current SM V I = - 0.64 A Body Diode Voltage - 0.8 - 1.2 V SD S t Body Diode Reverse Recovery Time 19 28.5 nC rr Body Diode Reverse Recovery Charge Q 6.65 10 rr I = - 0.64 A, dI/dt = 100 A/s F t Reverse Recovery Fall Time 7 ns a t Reverse Recovery Rise Time 12 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 70442 2 S19-0207-Rev. D, 04-Mar-2019